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X28HC64JI-90T1 PDF预览

X28HC64JI-90T1

更新时间: 2024-11-02 14:31:39
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
17页 344K
描述
8KX8 EEPROM 5V, 90ns, PQCC32, PLASTIC, MS-016AE, LCC-32

X28HC64JI-90T1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ, LDCC32,.5X.6针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.14
最长访问时间:90 ns其他特性:SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION
命令用户界面:NO数据轮询:YES
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PQCC-J32JESD-609代码:e0
长度:13.97 mm内存密度:65536 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:32字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
页面大小:64 words并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.55 mm最大待机电流:0.0002 A
子类别:EEPROMs最大压摆率:0.04 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
宽度:11.43 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

X28HC64JI-90T1 数据手册

 浏览型号X28HC64JI-90T1的Datasheet PDF文件第2页浏览型号X28HC64JI-90T1的Datasheet PDF文件第3页浏览型号X28HC64JI-90T1的Datasheet PDF文件第4页浏览型号X28HC64JI-90T1的Datasheet PDF文件第5页浏览型号X28HC64JI-90T1的Datasheet PDF文件第6页浏览型号X28HC64JI-90T1的Datasheet PDF文件第7页 
X28HC64  
64k, 8k x 8-Bit  
®
Data Sheet  
August 28, 2009  
FN8109.2  
5 Volt, Byte Alterable EEPROM  
Features  
The X28HC64 is an 8K x 8 EEPROM, fabricated with Intersil’s  
proprietary, high performance, floating gate CMOS  
technology. Like all Intersil programmable nonvolatile  
memories, the X28HC64 is a 5V only device. It features the  
JEDEC approved pinout for byte-wide memories, compatible  
with industry standard RAMs.  
• 70ns access time  
• Simple byte and page write  
- Single 5V supply  
- No external high voltages or VPP control circuits  
- Self-timed  
- No erase before write  
The X28HC64 supports a 64-byte page write operation,  
effectively providing a 32µs/byte write cycle, and enabling the  
entire memory to be typically written in 0.25 seconds. The  
X28HC64 also features DATA Polling and Toggle Bit Polling,  
two methods providing early end of write detection. In addition,  
the X28HC64 includes a user-optional software data protection  
mode that further enhances Intersil’s hardware write protect  
capability.  
- No complex programming algorithms  
- No overerase problem  
• Low power CMOS  
- 40mA active current max.  
• 200µA standby current max.  
• Fast write cycle times  
- 64-byte page write operation  
- Byte or page write cycle: 2ms typical  
- Complete memory rewrite: 0.25 sec. typical  
- Effective byte write cycle time: 32µs typical  
Intersil EEPROMs are designed and tested for applications  
requiring extended endurance. Inherent data retention is  
greater than 100 years.  
• Software data protection  
• End of write detection  
- DATA polling  
- Toggle bit  
• High reliability  
- Endurance: 100000 cycles  
- Data retention: 100 years  
• JEDEC approved byte-wide pin out  
• Pb-free available (RoHS compliant)  
Pinouts  
X28HC64  
(28 LD PDIP, SOIC)  
TOP VIEW  
X28HC64  
(32 LD PLCC)  
TOP VIEW  
1
28  
VCC  
NC  
A12  
A7  
2
27  
WE  
NC  
A8  
4
3
2
1
32 31 30  
29  
3
26  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
5
A8  
A9  
4
25  
A6  
6
7
28  
27  
5
24  
A9  
A5  
A11  
NC  
OE  
A10  
6
23  
A11  
A4  
8
9
26  
25  
7
X28HC64 22  
A3  
OE  
A10  
X28HC64  
(Top View)  
8
21  
20  
19  
18  
17  
16  
15  
A2  
10  
11  
24  
23  
9
A1  
CE  
CE  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
10  
11  
12  
13  
14  
A0  
I/O7  
I/O6  
12  
13  
22  
21  
NC  
I/O0  
I/O1  
I/O0  
14 15 16 17 18 19 20  
I/O2  
VSS  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2005-2006, 2009. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  

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