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X28HC256PIZ-12 PDF预览

X28HC256PIZ-12

更新时间: 2024-02-24 23:29:52
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
21页 977K
描述
LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

X28HC256PIZ-12 技术参数

生命周期:Unknown零件包装代码:PDIP, PLCC, SOIC
包装说明:DIP, DIP28,.6针数:28, 32, 28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:21 weeks
风险等级:5.53Is Samacsys:N
最长访问时间:120 ns命令用户界面:NO
数据轮询:YES耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDIP-T28JESD-609代码:e3
长度:37.4 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE页面大小:128 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:6.35 mm
最大待机电流:0.0005 A子类别:EEPROMs
最大压摆率:0.06 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES宽度:15.24 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

X28HC256PIZ-12 数据手册

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NTRODUCTION  
N
EW  
I
XP2R8OHDCUC2T56DM-12  
Rochester Electronics has re-introduced and continues to manufacture critically needed semiconductors with the full  
authorization of the original manufacturer and an attention to quality that meets or exceeds the original component.  
Original Manufacturer:  
X28HC256DM-12  
Original Part Number: X28HC256DM-12  
Description: 256K EEPROM  
Package: 28 pin DIP  
Manufacturing Flow: MTO  
Endurance: 1,000,000 cycles  
Available in Pb-Free versions  
Re-introduced by  
Rochester Electronics on  
October, 31, 2012  
Related Devices  
[ by temperature / package type / speed / application ]  
X28HC256D-12  
X28HC256D-90  
X28HC256DI-15  
X28HC256FM-90  
X28HC256JM-15T1  
X28HC256KI-15  
X28HC256DMB-15 X28HC256PM-12  
X28HC256EI-12 X28HC256KMB-15  
LOW POWER CMOS EEPROM  
with hi-speed page write capability  
The X28HC256 is  
a
second generation high  
a 24µs/byte write cycle, and enabling the entire  
memory to be typically rewritten in less than 0.8  
seconds. The X28HC256 also features DATA  
Polling and Toggle Bit Polling, two methods  
of providing early end of write detection.  
performance CMOS 32k x 8 EEPROM. It is fabricated  
with Intersil’s proprietary, textured poly floating  
gate technology, providing a highly reliable 5V only  
nonvolatile memory. The X28HC256 supports a 128-  
byte page write operation, effectively providing  
Worldwide Corporate Headquarters  
16 Malcolm Hoyt Drive . Newburyport, MA 01950  
phone 978.462.9332 . email sales@rocelec.com . web www.rocelec.com  
© Rochester Electronics, LLC - All Rights Reserved - 11162012  

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