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X24641S8IT1 PDF预览

X24641S8IT1

更新时间: 2024-01-10 00:12:58
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
14页 204K
描述
EEPROM, 8KX8, Serial, CMOS, PDSO8, PLASTIC, SOIC-8

X24641S8IT1 技术参数

生命周期:Obsolete包装说明:SOP,
Reach Compliance Code:unknown风险等级:5.84
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:65536 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

X24641S8IT1 数据手册

 浏览型号X24641S8IT1的Datasheet PDF文件第2页浏览型号X24641S8IT1的Datasheet PDF文件第3页浏览型号X24641S8IT1的Datasheet PDF文件第4页浏览型号X24641S8IT1的Datasheet PDF文件第5页浏览型号X24641S8IT1的Datasheet PDF文件第6页浏览型号X24641S8IT1的Datasheet PDF文件第7页 
64K  
8K x 8 Bit  
X24641  
400 KHz 2-Wire Serial E2PROM  
DESCRIPTION  
FEATURES  
• 1.8V to 3.6V, 2.5V to 5.5V and 4.5V to 5.5V Power  
Supply Operation  
• Low Power CMOS  
—Active read current less than 1mA  
—Active write current less than 3mA  
—Standby current less than 1µA  
• 400KHz Fast Mode 2-Wire Serial Interface  
—Down to 1.8V  
The X24641 is a CMOS Serial E2PROM Memory,  
internally organized 8K x 8. The device features a  
serial interface and software protocol allowing opera-  
tion on a simple two wire bus. The bus operates at  
400KHz all the way down to 1.8V.  
Three device select inputs (S –S ) allow up to eight  
0
2
devices to share a common two wire bus.  
—Schmitt trigger input noise suppression  
—Output slope control for ground bounce noise  
elimination  
• Internally Organized 8K x 8  
• 32 Byte Page Write Mode  
—Minimizes total write time per byte  
• Hardware Write Protect  
• Bidirectional Data Transfer Protocol  
• Self-Timed Write Cycle  
Hardware Write Protection is provided through a Write  
Protect (WP) input pin on the X24641. When the WP  
pin is HIGH, the upper quadrant of the Serial E2PROM  
array is protected against any nonvolatile write  
attempts.  
Xicor Serial E2PROM Memories are designed and  
tested for applications requiring extended endurance.  
Inherent data retention is greater than 100 years.  
—Typical Write Cycle Time of 5ms  
• High Reliability  
—Endurance: 1,000,000 cycles  
—Data retention: 100 years  
• 8-Lead SOIC  
BLOCK DIAGRAM  
Serial E2PROM Data  
and Address (SDA)  
Data Register  
Y Decode Logic  
Command  
SCL  
Page  
Decode  
Logic  
Decode  
and  
Control  
Logic  
E2PROM  
Array  
8K x 8  
S
S
S
2
1
0
Device  
Select  
Logic  
Write  
Protect  
Logic  
Write Voltage  
Control  
WP  
Xicor, Inc. 2000 Patents Pending  
7026 10/27/00 EP  
Characteristics subject to change without notice. 1 of 14  

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