Datasheet > WPAT80N660

WPAT80N660

更新时间： 2024-11-06 14:50:11

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	552K
描述
功率金氧半电晶体

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中文翻译

获取价格

数据手册

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WPAT80N660 数据手册

WPAT80N660-HAF

N-Channel Enhancement Mode Mosfet

Drain

Features

• Fast Switching Speed

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

1.Gate 2.Drain 3.Source

TO-220F Plastic Package

Application

Source

• Power Conversion AC-DC

Key Parameters

Parameter

V_(BR)DSS

Value

800

Unit

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

660 @ V_GS= 10 V

2.8

mΩ

22 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

800

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 30

4.6

2.9

T_c= 25℃

T_c= 100℃

Drain Current

I_D

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

1.4

Single Pulsed Avalanche Energy ²⁾

Power Dissipation

E_AS

77.4

℃

P_D

35.7

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J,T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.5

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 79 mH, R_g= 25 Ω, I_AS= 1.4 A, V_GS= 10 V.

R_θJA

1 / 7

Dated: 07/04/2023 Rev: 03

12 3 4 5 6 7

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