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WPAT90N1K5K PDF预览

WPAT90N1K5K

更新时间: 2024-11-06 14:54:51
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
8页 601K
描述
功率金氧半电晶体

WPAT90N1K5K 数据手册

 浏览型号WPAT90N1K5K的Datasheet PDF文件第2页浏览型号WPAT90N1K5K的Datasheet PDF文件第3页浏览型号WPAT90N1K5K的Datasheet PDF文件第4页浏览型号WPAT90N1K5K的Datasheet PDF文件第5页浏览型号WPAT90N1K5K的Datasheet PDF文件第6页浏览型号WPAT90N1K5K的Datasheet PDF文件第7页 
WPAT90N1K5K-HAF  
N-Channel Enhancement Mode MOSFET  
Drain  
Features  
Gate  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Source  
• Typical ESD Protection HBM Class 2  
1.Gate 2.Drain 3.Source  
TO-220F Plastic Package  
Classification Voltage Range(V)  
0A  
0B  
1A  
1B  
1C  
2
< 125  
125 to < 250  
250 to < 500  
500 to < 1000  
1000 to < 2000  
2000 to < 4000  
4000 to < 8000  
8000  
Key Parameters  
Parameter  
BVDSS  
Value  
Unit  
900  
1.4 @ VGS = 10 V  
3
V
Ω
RDS(ON) Max  
VGS(th) typ  
Qg typ  
V
3A  
3B  
11 @ VGS = 10 V  
nC  
Application  
• Offline Power Supply  
Absolute Maximum Ratings(at Ta = 25unless otherwise specified)  
Symbol  
VDS  
Value  
900  
Unit  
Parameter  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
± 20  
Tc = 25℃  
Tc = 100℃  
2.3  
1.4  
ID  
A
Drain Current  
Peak Drain Current, Pulsed 1)  
IDM  
IAS  
9
A
A
1.4  
Avalanche Current  
Single Pulse Avalanche Energy 2)  
Power Dissipation  
EAS  
84  
18  
mJ  
W
PD  
Tc = 25℃  
TJ, Tstg  
- 55 to + 150  
Operating Junction and Storage Temperature Range  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
6.9  
Unit  
Thermal Resistance from Junction to Case  
/W  
Thermal Resistance from Junction to Ambient  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%,Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 86 mH, Rg = 25 Ω, ID = 1.4 A, VGS = 10 V.  
RθJA  
45  
/W  
®
1 / 8  
Dated: 11/01/2022 Rev: 01  

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