Datasheet > WPAT60N280-CH

WPAT60N280-CH

更新时间： 2023-12-06 20:09:04

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	735K
描述
功率金氧半电晶体

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WPAT60N280-CH 数据手册

WPAT60N280-CH

Characteristics at T_a= 25℃ unless otherwise specified

Parameter

Symbol

Min.

Typ.

Max.

Unit

STATIC PARAMETERS

Drain-Source Breakdown Voltage

at I_D= 250 µA

Drain-Source Leakage Current

at V_DS= 480 V

Gate-Source Leakage Current

at V_GS= ± 30 V

Gate-Source Threshold Voltage

at V_DS= V_GS, I_D= 250 µA

Drain-Source On-State Resistance

at V_GS= 10 V, I_D= 7 A

BV_DSS

I_DSS

600

µA

I_GSS

± 100

V_GS(th)

R_DS(on)

280

mΩ

DYNAMIC PARAMETERS

Forward Transconductance

at V_DS= 20 V, I_D= 7 A

Gate resistance

at V_GS= 0 V, V_DS= 0 V, f = 1 MHz

Input Capacitance

at V_DS= 300 V, V_GS= 0 V, f = 1 MHz

Output Capacitance

at V_DS= 300 V, V_GS= 0 V, f = 1 MHz

Reverse Transfer Capacitance

at V_DS= 300 V, V_GS= 0 V, f = 1 MHz

Total Gate Charge

at V_DS= 300 V, V_GS= 10 V, I_D= 7 A

Gate Source Charge

at V_DS= 300 V, V_GS= 10 V, I_D= 7 A

Gate Drain Charge

at V_DS= 300 V, V_GS= 10 V, I_D= 7 A

Turn-On Delay Time

at V_DD= 300 V, V_GS= 10 V, I_D= 7 A, R_G= 24 Ω

Turn-On Rise Time

at V_DD= 300 V, V_GS= 10 V, I_D= 7 A, R_G= 24 Ω

Turn-Off Delay Time

g_fs

R_g

7.2

1.39

835

C_iss

C_oss

C_rss

Q_g

25.5

5.2

11.5

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

at V_DD= 300 V, V_GS= 10 V, I_D= 7 A, R_G= 24 Ω

Turn-Off Fall Time

at V_DD= 300 V, V_GS= 10 V, I_D= 7 A, R_G= 24 Ω

Body-Diode PARAMETERS

Drain-Source Diode Forward Voltage

at I_S= 1 A, V_GS= 0 V

V_SD

1.4

Body-Diode Continuous Current

I_S

Body-Diode Continuous Current, Pulsed

I_SM

Body Diode Reverse Recovery Time

at I_S= 7 A, di/dt = 100 A / µs

Body Diode Reverse Recovery Charge

at I_S= 7 A, di/dt = 100 A / µs

t_rr

315

3.2

Q_rr

µC

2 / 7

Dated: 30/08/2023 Rev: 01

123 4 5 6 7

下载PDF

与WPAT60N280-CH相关器件

型号	品牌	描述	获取价格	数据表
WPAT60N360	SWST	功率金氧半电晶体	获取价格
WPAT60N360-CH	SWST	功率金氧半电晶体	获取价格
WPAT60N580	SWST	功率金氧半电晶体	获取价格
WPAT60N580-CH	SWST	功率金氧半电晶体	获取价格
WPAT65N190	SWST	功率金氧半电晶体	获取价格
WPAT65N190-CH	SWST	功率金氧半电晶体	获取价格