Datasheet > WPAT70N600

WPAT70N600

更新时间： 2024-11-06 14:55:35

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	543K
描述
功率金氧半电晶体

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中文翻译

获取价格

数据手册

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WPAT70N600 数据手册

WPAT70N600-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low Gate Charge

• High Peak Current Capability

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Source

TO-220F Plastic Package

1.Gate 2.Drain 3.Source

Applications

• For Flyback topologies for example used in Chargers,

Adapters, Lighting etc.

Key Parameters

Parameter

BV_DSS

Value

700

Unit

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

600 @ V_GS= 10 V

3.5

mΩ

16.5 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Drain-Source Voltage

Symbol

V_DS

Value

700

Unit

Gate-Source Voltage

Drain Current

V_GS

± 30

T_c= 25℃

6.5

I_D

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

I_DM

I_AS

2.1

E_AS

174

℃

P_D

62.5

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 79 mH, R_g= 25 Ω, I_AS= 2.1 A, V_GS= 10 V.

℃

R_θJA

1 / 7

Dated: 02/08/2023 Rev: 02

12 3 4 5 6 7

中文翻译

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