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WME128K8-125CQA PDF预览

WME128K8-125CQA

更新时间: 2024-11-13 15:57:59
品牌 Logo 应用领域
玛居礼 - MERCURY 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
12页 648K
描述
EEPROM,

WME128K8-125CQA 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.63
Is Samacsys:N内存集成电路类型:EEPROM
编程电压:5 VBase Number Matches:1

WME128K8-125CQA 数据手册

 浏览型号WME128K8-125CQA的Datasheet PDF文件第2页浏览型号WME128K8-125CQA的Datasheet PDF文件第3页浏览型号WME128K8-125CQA的Datasheet PDF文件第4页浏览型号WME128K8-125CQA的Datasheet PDF文件第5页浏览型号WME128K8-125CQA的Datasheet PDF文件第6页浏览型号WME128K8-125CQA的Datasheet PDF文件第7页 
128Kx8 CMOS MONOLITHIC EEPROM  
SMD 5962-96796  
WME128K8-XXX  
FEATURES  
 Read Access Times of 125, 140, 150, 200, 250, 300ns  
 Automatic Page Write Operation  
 JEDEC Approved Packages  
• Internal Address and Data Latches for 128 Bytes  
• Internal Control Timer  
• 32 pin, Hermetic Ceramic, 0.600" DIP  
(Package 300)  
 Page Write Cycle Time 10ms Max.  
 Data Polling for End of Write Detection  
 Hardware and Software Data Protection  
 TTL Compatible Inputs and Outputs  
• 32 lead, Hermetic Ceramic, 0.400" SOJ  
(Package 101)  
 Commercial, Industrial and Military Temperature Ranges  
 MIL-STD-883 Compliant Devices Available  
 Write Endurance 10,000 Cycles  
This product is subject to change without notice.  
 Data Retention at 25°C, 10 Years  
 Low Power CMOS Operation  
FIGURE 1 – PIN CONFIGURATION  
PIN DESCRIPTION  
A0-16  
I/O0-7  
CS#  
OE#  
WE#  
VCC  
Address Inputs  
Data Input/Output  
Chip Selects  
Output Enable  
Write Enable  
+5.0v Power  
Ground  
32 DIP  
32 CSOJ  
TOP VIEW  
NC  
A16  
A15  
A12  
A7  
1
2
3
4
5
6
32  
VCC  
VSS  
31 WE#  
30 NC  
29 A14  
28 A13  
27 A8  
A6  
A5  
7
26 A9  
A4  
A3  
A2  
A1  
8
9
25 A11  
24 OE#  
23 A10  
22 CS#  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
10  
11  
12  
13  
14  
15  
16  
A0  
I/O0  
I/O1  
I/O2  
VSS  
1
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com  
4311.11E-0718-ss-WME128K8-XXX  

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