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WG10033R18 PDF预览

WG10033R18

更新时间: 2024-11-21 07:16:55
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
4页 220K
描述
Silicon Controlled Rectifier, 1180 A, 3300 V, GATE TURN-OFF SCR

WG10033R18 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.83其他特性:PEAK TURN-OFF CURRENT IS 1000A
标称电路换相断开时间:130 µs配置:SINGLE
最大直流栅极触发电流:1300 mAJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:1180 A断态重复峰值电压:3300 V
重复峰值反向电压:1800 V表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:GATE TURN-OFF SCRBase Number Matches:1

WG10033R18 数据手册

 浏览型号WG10033R18的Datasheet PDF文件第2页浏览型号WG10033R18的Datasheet PDF文件第3页浏览型号WG10033R18的Datasheet PDF文件第4页 

与WG10033R18相关器件

型号 品牌 获取价格 描述 数据表
WG10033R19 IXYS

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Silicon Controlled Rectifier, 1180 A, 3300 V, GATE TURN-OFF SCR
WG10033R20 IXYS

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Gate Turn-Off SCR, 1180A I(T)RMS, 3300V V(DRM), 2000V V(RRM), 1 Element
WG10033R21 IXYS

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Silicon Controlled Rectifier, 1180 A, 3300 V, GATE TURN-OFF SCR
WG10033R22 IXYS

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Gate Turn-Off SCR, 1180A I(T)RMS, 3300V V(DRM), 2200V V(RRM), 1 Element
WG10033R24 IXYS

获取价格

Gate Turn-Off SCR, 1180A I(T)RMS, 3300V V(DRM), 2400V V(RRM), 1 Element
WG10033R25 IXYS

获取价格

Gate Turn-Off SCR, 1180A I(T)RMS, 3300V V(DRM), 2500V V(RRM), 1 Element
WG10033R27 IXYS

获取价格

Gate Turn-Off SCR, 1180A I(T)RMS, 3300V V(DRM), 2700V V(RRM), 1 Element
WG10033R28 IXYS

获取价格

Gate Turn-Off SCR, 1180A I(T)RMS, 3300V V(DRM), 2800V V(RRM), 1 Element
WG1003401 IXYS

获取价格

Gate Turn-Off SCR, 3400V V(DRM), 100V V(RRM), 1 Element
WG10034F IXYS

获取价格

Silicon Controlled Rectifier, 980 A, 3400 V, GATE TURN-OFF SCR