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WF4M32-150H2C5 PDF预览

WF4M32-150H2C5

更新时间: 2024-11-05 20:13:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 内存集成电路
页数 文件大小 规格书
11页 755K
描述
Flash Module, 4MX32, 150ns, CPGA66, 1.385 X 1.385 INCH, HERMETIC SEALED, CERAMIC, HIP-66

WF4M32-150H2C5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:PGA包装说明:1.385 X 1.385 INCH, HERMETIC SEALED, CERAMIC, HIP-66
针数:66Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.79最长访问时间:150 ns
其他特性:USER CONFIGURABLE AS 16M X 8备用内存宽度:16
JESD-30 代码:S-CPGA-P66JESD-609代码:e4
长度:35.2 mm内存密度:134217728 bit
内存集成电路类型:FLASH MODULE内存宽度:32
功能数量:1端子数量:66
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX32
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:PGA
封装形状:SQUARE封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:5 V认证状态:Not Qualified
座面最大高度:5.7 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:GOLD
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULAR处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:35.2 mm
Base Number Matches:1

WF4M32-150H2C5 数据手册

 浏览型号WF4M32-150H2C5的Datasheet PDF文件第2页浏览型号WF4M32-150H2C5的Datasheet PDF文件第3页浏览型号WF4M32-150H2C5的Datasheet PDF文件第4页浏览型号WF4M32-150H2C5的Datasheet PDF文件第5页浏览型号WF4M32-150H2C5的Datasheet PDF文件第6页浏览型号WF4M32-150H2C5的Datasheet PDF文件第7页 
WF4M32-XXX5  
4Mx32 5V NOR FLASH MODULE  
FEATURES  
 Access Times of 100, 120, 150ns  
 5 Volt Read and Write  
 Low Power CMOS  
 Packaging:  
• 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP  
(Package 402).  
 Data# Polling and Toggle Bit feature for detection of  
program or erase cycle completion.  
• 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880") square  
(Package 509) 4.57mm (0.180") height. Designed to t  
JEDEC 68 lead 0.990CQFJ footprint (Fig. 3)  
 Supports reading or programming data to a sector not being  
erased.  
 RESET# pin resets internal state machine to the read  
 Sector Architecture  
mode.  
• 32 equal size sectors of 64KBytes per each 2Mx8 chip  
 Built-in Decoupling Caps and Multiple Ground Pins for Low  
Noise Operation, Separate Power and Ground Planes to  
improve noise immunity  
• Any combination of sectors can be erased. Also supports  
full chip erase.  
 Minimum 100,000 Write/Erase Cycles Minimum  
 Organized as 4Mx32  
* This product is subject to change without notice.  
Note: For programming information and waveforms refer to Flash Programming 16M5 Application  
Note AN0038. RY/BY# function and timings don't apply to this device.  
 User congurable as 2x4Mx16 or 4x4Mx8 in HIP.  
 Commercial, Industrial, and Military Temperature Ranges  
FIGURE 1 – PIN CONFIGURATION FOR  
WF4M32-XH2X5  
PIN DESCRIPTION  
I/O0-31  
A0-21  
Data Inputs/Outputs  
Address Inputs  
Write Enable  
Chip Select  
Output Enable  
Power Supply  
Ground  
Top View  
WE#  
1
12  
23  
34  
45  
56  
CS1-4  
#
OE#  
VCC  
I/O8  
I/O9  
I/O10  
A14  
A16  
A11  
A0  
RESET#  
CS2#  
GND  
I/O11  
A10  
I/O15  
I/O14  
I/O13  
I/O12  
OE#  
A17  
I/O24  
I/O25  
I/O26  
A7  
VCC  
CS4#  
NC  
I/O31  
I/O30  
I/O29  
I/O28  
A1  
VSS  
RESET#  
Reset  
I/O27  
A4  
A12  
BLOCK DIAGRAM  
A9  
A21  
A5  
A2  
CS1#  
CS2#  
CS3#  
CS4#  
A21  
A15  
WE#  
I/O7  
A13  
A6  
A3  
A18  
I/O0  
I/O1  
I/O2  
VCC  
A8  
A20  
CS3#  
GND  
I/O19  
I/O23  
I/O22  
I/O21  
I/O20  
OE#  
WE#  
CS1#  
A19  
I/O6  
I/O16  
I/O17  
I/O18  
A0-20  
RESET#  
2M x 8  
2M x 8  
2Mx 8  
2M x 8  
I/O5  
2M x 8  
2M x 8  
2M x 8  
2M x 8  
I/O3  
I/O4  
11  
22  
33  
44  
55  
66  
I/O16-23  
I/O24-31  
I/O0-7  
I/O8-15  
Microsemi Corporation reserves the right to change products or specications without notice.  
June 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 10  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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