Datasheet > WDATE6N055LK

WDATE6N055LK

更新时间： 2024-11-19 14:55:51

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	615K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WDATE6N055LK 数据手册

WDATE6N055LK-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_{DS( ON )}

• Halogen and Antimony Free(HAF),

Gate

RoHS compliant

• Built-in G-S Protection Diode

• Typical ESD Protection HBM Class 2

Source

1.Gate 2.Drain 3.Source

TO-220F Plastic Package

Classification Voltage Range(V)

< 125

Key Parameters

Parameter

BV_DSS

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Value

Unit

6 @ V_GS= 10 V

10 @ V_GS= 4.5 V

1.7

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

31 @ V_GS= 10 V

Application

• Motor/Body Load Control

• High Frequency Switching and Synchronous Rectification

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

Continuous Drain Current

I_D

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

280

Single Pulse Avalanche Energy ²⁾

E_AS

℃

Power Dissipation

P_D

21.8

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

5.7

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_AS= 9 A, V_GS= 10 V.

R_θJA

1 / 7

Dated: 09/05/2023 Rev: 02

12 3 4 5 6 7

中文翻译

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