是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | BGA, | 针数: | 224 |
Reach Compliance Code: | compliant | 风险等级: | 5.75 |
Is Samacsys: | N | 驱动器接口标准: | IDE |
主机数据传输速率最大值: | 66 MBps | 主机接口标准: | PCMCIA; ATA; IDE |
JESD-30 代码: | R-PBGA-B224 | JESD-609代码: | e0 |
端子数量: | 224 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大供电电压: | 3.6 V |
最小供电电压: | 3 V | 标称供电电压: | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | TIN LEAD |
端子形式: | BALL | 端子节距: | 1.27 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
uPs/uCs/外围集成电路类型: | SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
W7N512M16VH2SBIE | WEDC |
获取价格 |
Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT | |
W7N512M16VH3SBI | WEDC |
获取价格 |
Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT | |
W7N512M16VH3SBIB | WEDC |
获取价格 |
Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT | |
W7N512M16VH3SBIC | WEDC |
获取价格 |
Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT | |
W7N512M16VH3SBIC | MICROSEMI |
获取价格 |
Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT | |
W7N512M16VH3SBID | WEDC |
获取价格 |
Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT | |
W7N512M16VH3SBIE | WEDC |
获取价格 |
Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT | |
W7N8GVH2MBI | MICROSEMI |
获取价格 |
Flash Memory Drive, CMOS | |
W7NB80 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET | |
W7NCF01GH10CS2DM1G | MICROSEMI |
获取价格 |
Flash Card, 1GX8, 250ns, CARD-50 |