是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PITCH, PLASTIC, BGA-224 | Reach Compliance Code: | unknown |
风险等级: | 5.75 | Is Samacsys: | N |
驱动器接口标准: | IDE | 主机数据传输速率最大值: | 66 MBps |
主机接口标准: | PCMCIA; ATA; IDE | JESD-30 代码: | R-PBGA-B224 |
JESD-609代码: | e0 | 端子数量: | 224 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大供电电压: | 3.6 V | 最小供电电压: | 3 V |
标称供电电压: | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | TIN LEAD | 端子形式: | BALL |
端子节距: | 1.27 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | uPs/uCs/外围集成电路类型: | SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
W7N512M16VH3SBID | WEDC |
获取价格 |
Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT | |
W7N512M16VH3SBIE | WEDC |
获取价格 |
Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT | |
W7N8GVH2MBI | MICROSEMI |
获取价格 |
Flash Memory Drive, CMOS | |
W7NB80 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET | |
W7NCF01GH10CS2DM1G | MICROSEMI |
获取价格 |
Flash Card, 1GX8, 250ns, CARD-50 | |
W7NCF01GH10CS8HM1G | MICROSEMI |
获取价格 |
Flash Card, 1GX8, 250ns, CARD-50 | |
W7NCF01GH10CS9HM1G | MICROSEMI |
获取价格 |
Flash Card, 1GX8, 250ns, CARD-50 | |
W7NCF01GH10CSA3DM1G | MICROSEMI |
获取价格 |
Flash Card, 1GX8, 250ns, CARD-50 | |
W7NCF01GH10CSA6DM1G | MICROSEMI |
获取价格 |
Flash Card, 1GX8, 250ns, CARD-50 | |
W7NCF01GH10CSA6JM1G | MICROSEMI |
获取价格 |
Flash Card, 1GX8, 250ns, CARD-50 |