Datasheet > W7N8GVH2MBI

W7N8GVH2MBI

更新时间： 2024-09-23 21:17:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		外围集成电路
页数	文件大小	规格书
10页	420K
描述
Flash Memory Drive, CMOS

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技术参数
数据手册

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W7N8GVH2MBI 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	HTS代码：	8542.31.00.01
风险等级：	5.84	技术：	CMOS
uPs/uCs/外围集成电路类型：	SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE	Base Number Matches：	1

W7N8GVH2MBI 数据手册

W7N8GVH2MBI

Embedded SLC NAND PATA SSD PBGA

FEATURES:

DESCRIPTION



Storage Capacity: 8GB ( Contact factory for 16 GB availability )

The W7N8GVH2MBI is a small reliable PATA (IDE) solid

state storage solution in a single integrated BGA

package. Typical NAND related concerns like wear

leveling, sufficient error correction, as well as power

interruption protection is managed by the integrated 32-

bit RISC flash controller.



Media:

16 Gb 34 nm geometry SLC NAND Flash

100,000 PE cycle endurance.

3.3 V single power supply



Power consumption

Consuming little power and providing up to 70% space

savings compared to a standard CF card with socket,

Active

Idle

55 mA (Typ)

2.5 mA μA (Typ)

the W7N8GVH2MBI is

compelling storage

alternative for embedded products requiring very a

ruggedized space efficient storage solution.



Interface modes

ATA-6 compatible in True IDE mode

Less than 1 error in 10¹⁴bits read

Fully encapsulated package assures robust vibration tolerance



The W7N8GVH2MBI is offered with an initial capacity

of 8 GB and a planned capacity of 16 GB. Contact

Microsemi for lead time on the 16 GB version.



Endurance as Total Byte Writes (TBW):

100,000 PE SLC flash

(100,000 * 8 GB)/3 = 26 terabytes TBW

* This product is subject to change without notice.



Typical Performance (128K block size)

Burst Transfer speed in UDMA mode 4 is 66 MB/s

Sustained, sequential write operations: 25 MB/s

Sustained, sequential read operations: 45 MB/s



BCH ECC corrects 6 bits per 512 byte sector

Supported modes:

PIO 0-4

MWDMA 0-3

UDMA 0-4



Dimensions:

8 GB – (27 mm x 22 mm x 4.908 mm) Max (before soldering)

Environment conditions:

Operating temperature:

Storage temperature:

-40 °C to 85 °C

-55 °C to 105 °C¹



Read disturb mitigation and power loss protection.

Single connector free solution for embedded applications

1.27 mm pitch; eutectic tin-lead solder ball

Optional screening to higher temperature operation.¹

DENSITY COMPARISONS

Standard CF Card

W7N8GVH2MBI

Area

1980 mm²including Socket

594 mm²

70%

Note 1: Long term data retention may be reduced when the product is operated or stored at temperatures above 90°C for extended periods of time.

Microsemi Corporation reserves the right to change products or specifications without notice.

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

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