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W7NB80

更新时间： 2024-09-22 21:53:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
8页	90K
描述
N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET

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W7NB80 数据手册

STW7NB80

N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247

PowerMESH MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STW7NB80

800 V

< 1.9 Ω

6.5 A

■

TYPICAL R_DS(on)= 1.6 Ω

EXTREMELY HIGH dv/dt CAPABILITY

± 30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

TO-247

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

800

Unit

Drain-source Voltage (V_GS= 0)

800

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 C

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

6.5

I_D

4.1

I_DM( )

•

P_tot

Total Dissipation at T_c= 25 C

160

Derating Factor

1.28

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

•

≤ ≤ µ ≤ ≤

(1) I_SD6 A, di/dt 200A/ s, V_DDV_(BR)DSS, Tj T_JMAX

( ) Pulse width limited by safe operating area

1/8

December 1999

12 3 4 5 6 7 8

中文翻译

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