Datasheet > 存储 > DRAM> W3H32M72E-533SB

W3H32M72E-533SB

更新时间： 2024-11-11 03:07:23

品牌	Logo	应用领域
WEDC		动态存储器双倍数据速率
页数	文件大小	规格书
30页	920K
描述
32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package

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中文翻译

获取价格

数据手册

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W3H32M72E-533SB 数据手册

W3H32M72E-XSBX

White Electronic Designs

PRELIMINARY*

32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package

FEATURES

ꢀ

Data rate = 667*, 533, 400

ꢀ

Programmable CAS latency: 3, 4, 5, or 6

Posted CAS additive latency: 0, 1, 2, 3 or 4

Write latency = Read latency - 1* tCK

ꢀ

Package:

• 208 Plastic Ball Grid Array (PBGA), 18 x 20mm

• 1.0mm pitch

Commercial, Industrial and Military Temperature

Ranges

ꢀ

Differential data strobe (DQS, DQS#) per byte

Internal, pipelined, double data rate architecture

4-bit prefetch architecture

ꢀ

Organized as 32M x 72

Weight: W3H32M72E-XSBX - 2.5 grams typical

DLL for alignment of DQ and DQS transitions with

clock signal

BENEFITS

ꢀ

65% SPACE SAVINGS vs. FPBGA

ꢀ

Four internal banks for concurrent operation

(Per DDR2 SDRAM Die)

Reduced part count

54% I/O reduction vs FPBGA

ꢀ

Programmable Burst lengths: 4 or 8

Auto Refresh and Self Refresh Modes

On Die Termination (ODT)

Reduced trace lengths for lower parasitic

capacitance

ꢀ

Suitable for hi-reliability applications

Adjustable data – output drive strength

Single 1.8V 0.1V supply

Upgradable to 64M x 72 density (contact factory for

information)

* This product is under development, is not qualiﬁed or characterized and is subject

to change without notice.

FIGURE 1 – DENSITY COMPARISONS

Actual Size

CSP Approach (mm)

W3H32M72E-XSBX

11.0

White Electronic Designs

W3H32M72E-XSBX

FBGA

19.0

Area

5 x 209mm²= 1,045mm²

5 x 90 balls = 450 balls

360mm²

65%

54%

I/O

208 Balls

Count

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

February 2006

Rev. 2

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7...30

中文翻译

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与W3H32M72E-533SB相关器件

型号	品牌	获取价格	描述	数据表
W3H32M72E-533SB2C	MICROSEMI	获取价格	DDR DRAM, 32MX72, 0.6ns, CMOS, PBGA208, 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H32M72E-533SB2CF	MICROSEMI	获取价格	DDR DRAM, 32MX72, 0.6ns, CMOS, PBGA208, 16 X 20 MM, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-20
W3H32M72E-533SB2I	MICROSEMI	获取价格	DDR DRAM, 32MX72, 0.6ns, CMOS, PBGA208, 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H32M72E-533SB2IF	MICROSEMI	获取价格	DDR DRAM, 32MX72, 0.6ns, CMOS, PBGA208, 16 X 20 MM, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-20
W3H32M72E-533SB2M	MICROSEMI	获取价格	DDR DRAM, 32MX72, 0.6ns, CMOS, PBGA208, 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H32M72E-533SB2MF	MICROSEMI	获取价格	DDR DRAM, 32MX72, 0.6ns, CMOS, PBGA208, 16 X 20 MM, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-20
W3H32M72E-533SBC	WEDC	获取价格	32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
W3H32M72E-533SBI	WEDC	获取价格	32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
W3H32M72E-533SBM	WEDC	获取价格	32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
W3H32M72E-667BI	MERCURY	获取价格	DDR DRAM, 32MX72, 0.65ns, CMOS, PBGA208, 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208

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