Datasheet > W3H128M64E2-400SBI

W3H128M64E2-400SBI

更新时间： 2024-11-06 18:27:39

品牌	Logo	应用领域
WEDC		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
31页	989K
描述
DDR DRAM, 128MX64, 0.6ns, CMOS, PBGA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208

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W3H128M64E-XSBX

White Electronic Designs

ADVANCED*

128M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package

FEATURES

Data rate = 667, 533, 400 Mb/s

Posted CAS additive latency: 0, 1, 2, 3 or 4

Write latency = Read latency - 1* ^tCK

Package:

• 208 Plastic Ball Grid Array (PBGA), 16 x 22mm

• 1.0mm pitch

Commercial, Industrial and Military Temperature

Ranges

Organized as 128M x 64

Supply Voltage = 1.8V

Weight: W3H128M64E-XSBX - tbd

Differential data strobe (DQS, DQS#) per byte

Internal, pipelined, double data rate architecture

4-bit prefetch architecture

BENEFITS

45% Space savings vs. FBGA

DLL for alignment of DQ and DQS transitions with

clock signal

Reduced part count

38% I/O reduction vs FBGA

Eight internal banks for concurrent operation

(Per DDR2 SDRAM Die)

Reduced trace lengths for lower parasitic

capacitance

Programmable Burst lengths: 4 or 8

Auto Refresh and Self Refresh Modes

On Die Termination (ODT)

Suitable for hi-reliability applications

* This product is under development, is not qualiﬁed or characterized and is subject

to change or cancellation without notice.

Adjustable data – output drive strength

Programmable CAS latency: 4, 5 or 6

CK/CK# Termination options available

• 0 ohm, 20 ohm

FIGURE 1 – DENSITY COMPARISONS

W3H128M64E-XSBX

CSP Approach (mm)

11.5

FBGA

White Electronic Designs

14.0

W3H128M64E-XSBX

Area

4 x 161mm²= 644mm²

4 x 84 balls = 336 balls

352mm²

45%

38%

I/O

Count

208 Balls

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

October 2008

Rev. 1

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

12 3 4 5 6 7...31

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与W3H128M64E2-400SBI相关器件

型号	品牌	获取价格	描述	数据表
W3H128M64E2-400SBM	WEDC	获取价格	DDR DRAM, 128MX64, 0.6ns, CMOS, PBGA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H128M64E2-533SBC	WEDC	获取价格	DDR DRAM, 128MX64, 0.5ns, CMOS, PBGA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H128M64E2-533SBI	WEDC	获取价格	DDR DRAM, 128MX64, 0.5ns, CMOS, PBGA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H128M64E2-533SBM	WEDC	获取价格	DDR DRAM, 128MX64, 0.5ns, CMOS, PDMA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H128M64E2-667SBC	WEDC	获取价格	DDR DRAM, 128MX64, 0.45ns, CMOS, PDMA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H128M64E2-667SBI	WEDC	获取价格	DDR DRAM, 128MX64, 0.45ns, CMOS, PDMA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H128M64E2-667SBM	WEDC	获取价格	DDR DRAM, 128MX64, 0.45ns, CMOS, PDMA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H128M64E-400SBC	WEDC	获取价格	DDR DRAM, 128MX64, 0.6ns, CMOS, PBGA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H128M64E-400SBI	WEDC	获取价格	DDR DRAM, 128MX64, 0.6ns, CMOS, PBGA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
W3H128M64E-400SBM	WEDC	获取价格	DDR DRAM, 128MX64, 0.6ns, CMOS, PBGA208, 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208

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