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W3EG64128S263JD3SG PDF预览

W3EG64128S263JD3SG

更新时间: 2024-11-07 14:36:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
12页 294K
描述
DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184

W3EG64128S263JD3SG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM,针数:184
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.62
访问模式:DUAL BANK PAGE BURST最长访问时间:0.75 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-XDMA-N184
内存密度:8589934592 bit内存集成电路类型:DDR DRAM MODULE
内存宽度:64功能数量:1
端口数量:1端子数量:184
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128MX64
封装主体材料:UNSPECIFIED封装代码:DIMM
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
自我刷新:YES最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

W3EG64128S263JD3SG 数据手册

 浏览型号W3EG64128S263JD3SG的Datasheet PDF文件第2页浏览型号W3EG64128S263JD3SG的Datasheet PDF文件第3页浏览型号W3EG64128S263JD3SG的Datasheet PDF文件第4页浏览型号W3EG64128S263JD3SG的Datasheet PDF文件第5页浏览型号W3EG64128S263JD3SG的Datasheet PDF文件第6页浏览型号W3EG64128S263JD3SG的Datasheet PDF文件第7页 
W3EG64128S-D3  
-JD3  
White Electronic Designs  
ADVANCED*  
1GB – 2x64Mx64 DDR SDRAM UNBUFFERED  
FEATURES  
DESCRIPTION  
Double-data-rate architecture  
The W3EG64128S is a 2x64Mx64 Double Data Rate  
SDRAM memory module based on 512Mb DDR SDRAM  
component. The module consists of sixteen 64Mx8 DDR  
SDRAMs in 66 pin TSOP packages mounted on a 184  
pin FR4 substrate.  
Clock speeds of 100MHz, 133MHz, 166MHz and  
200MHz  
DDR200, DDR266, DDR333 and DDR400  
Bi-directional data strobes (DQS)  
Differential clock inputs (CK & CK#)  
Programmable Read Latency 2,2.5 (clock)  
Programmable Burst Length (2,4,8)  
Programmable Burst type (sequential & interleave)  
Edge aligned data output, center aligned data input.  
Auto and self refresh  
Synchronous design allows precise cycle control with the  
use of system clock. Data I/O transactions are possible on  
both edges and Burst Lengths allow the same device to be  
useful for a variety of high bandwidth, high performance  
memory system applications.  
* This product is under development, is not qualied or characterized and is subject to  
change or cancellation without notice.  
Serial presence detect  
NOTE: Consult factory for availability of:  
• RoHS compliant products  
Dual Rank  
• Vendor source control options  
• Industrial temperature option  
Power supply:  
• VCC = VCCQ = +2.5V ±0.2V (100, 133 and 166 MHz)  
• VCC = VCCQ = +2.6V ±0.1V (200 MHz)  
JEDEC standard 184 pin DIMM package  
• JD3 PCB height: 30.48 (1.20") MAX  
OPERATING FREQUENCIES  
DDR400 @ CL=3  
200MHz  
DDR333 @ CL=2.5  
166MHz  
DDR266 @ CL=2  
133MHz  
DDR266 @ CL=2  
133MHz  
DDR266 @ CL=2.5  
133MHz  
DDR200 @ CL=2  
100MHz  
Clock Speed  
CL-tRCD-tRP  
3-3-3  
2.5-3-3  
2-2-2  
2-3-3  
2.5-3-3  
2-2-2  
December 2006  
Rev. 6  
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  

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