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W29F102P-70B PDF预览

W29F102P-70B

更新时间: 2024-11-29 03:17:55
品牌 Logo 应用领域
华邦 - WINBOND /
页数 文件大小 规格书
21页 253K
描述
64K 16 CMOS FLASH MEMORY

W29F102P-70B 数据手册

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W29F102  
64K ´ 16 CMOS FLASH MEMORY  
GENERAL DESCRIPTION  
The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K ´ 16 bits. The  
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is  
not required. The unique cell architecture of the W29F102 results in fast program/erase operations  
with extremely low current consumption (compared to other comparable 5-volt flash memory  
products). The device can also be programmed and erased using standard EPROM programmers.  
FEATURES  
· Single 5-volt operations:  
· Low power consumption  
- 5-volt Read  
- Active current: 25 mA (typ.)  
- Standby current: 20 mA (typ.)  
- 5-volt Erase  
· Automatic program and erase timing with  
- 5-volt Program  
internal VPP generation  
· Fast Program operation:  
· End of program or erase detection  
- Toggle bit  
- Word-by-Word programming: 50 mS (max.)  
· Fast Erase operation: 100 mS (typ.)  
· Fast Read access time: 45/50/55/70 nS  
· Endurance: 1K/10K cycles (typ.)  
· Ten-year data retention  
- Data polling  
· Latched address and data  
· TTL compatible I/O  
· JEDEC standard word-wide pinouts  
· Hardware data protection  
· 8K word Boot Block with Lockout protection  
· Available packages: 40-pin TSOP and 44-pin  
PLCC  
Publication Release Date: June 1999  
- 1 -  
Revision A4  

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