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W1032LC580 PDF预览

W1032LC580

更新时间: 2024-11-02 20:39:31
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管
页数 文件大小 规格书
9页 749K
描述
Rectifier Diode,

W1032LC580 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.74Base Number Matches:1

W1032LC580 数据手册

 浏览型号W1032LC580的Datasheet PDF文件第2页浏览型号W1032LC580的Datasheet PDF文件第3页浏览型号W1032LC580的Datasheet PDF文件第4页浏览型号W1032LC580的Datasheet PDF文件第5页浏览型号W1032LC580的Datasheet PDF文件第6页浏览型号W1032LC580的Datasheet PDF文件第7页 
Date:- 4 Aug, 2003  
Data Sheet Issue:- 1  
Rectifier Diode  
Types W1032LC500 to W1032LC600  
(Old Part Number: SW50-60CXC350)  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VRRM  
VRSM  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
5000-6000  
5100-6100  
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IF(AV)M  
IF(AV)M  
IF(AV)M  
Maximum average forward current, Tsink=55°C, (note 2)  
Maximum average forward current. Tsink=100°C, (note 2)  
Nominal RMS forward current, Tsink=100°C, (note 3)  
1032  
A
A
689  
432  
A
IF(RMS)M Nominal RMS forward current, Tsink=25°C, (note 2)  
1912  
1717  
A
IF(d.c.)  
D.C. forward current, Tsink=25°C, (note 4)  
A
IFSM  
IFSM2  
I2t  
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, Vrm£10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)  
I2t capacity for fusing tp=10ms, Vrm£10V, (note 5)  
Operating temperature range  
7200  
8000  
A
A
259×103  
320×103  
-40 to +150  
-55 to +150  
A2s  
A2s  
°C  
°C  
I2t  
Tj op  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 150°C Tj initial.  
Data Sheet. Type W1032LC500 to W1032LC600 Issue 1  
Page 1 of 8  
July, 2003  

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