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VUO68

更新时间: 2024-11-17 22:17:23
品牌 Logo 应用领域
IXYS 三相整流桥
页数 文件大小 规格书
1页 169K
描述
Three Phase Rectifier Bridge

VUO68 数据手册

  
VUO 68  
IdAV = 68 A  
VRRM = 800-1600 V  
Three Phase Rectifier Bridge  
Preliminary data  
D
VRSM  
V
VRRM  
V
Types  
H
A
N
900  
1300  
1500  
1700  
800  
1200  
1400  
1600  
VUO 68-08NO7  
VUO 68-12NO7  
VUO 68-14NO7  
VUO 68-16NO7  
K
Symbol  
Test Conditions  
TC = 100°C, module  
Maximum Ratings  
Features  
IdAV  
IFSM  
68  
A
• Package with DCB ceramic  
base plate  
• Isolation voltage 3000 V~  
• Planar passivated chips  
• Low forward voltage drop  
• Leads suitable for PC board soldering  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
300  
320  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
260  
280  
A
A
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
450  
425  
A2s  
A2s  
Applications  
• Supplies for DC power equipment  
• Input rectifiers for PWM inverter  
• Battery DC power supplies  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
340  
325  
A2s  
A2s  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
• Field supply for DC motors  
Advantages  
VISOL  
50/60 Hz, RMS t = 1 min  
IISOL £ 1 mA t = 1 s  
2500  
3000  
V~  
V~  
• Easy to mount with two screws  
• Space and weight savings  
• Improved temperature and power  
cycling capability  
Md  
Mounting torque (M4)  
typ.  
1.5 - 2  
14 - 18 lb.in.  
18  
Nm  
• Small and light weight  
Weight  
g
Dimensions in mm (1 mm = 0.0394")  
Symbol  
IR  
Test Conditions  
Characteristic Values  
VR = VRRM  
VR = VRRM  
;
;
TVJ = 25°C  
TVJ = TVJM  
£
£
0.5 mA  
3
1.46  
0.8  
mA  
VF  
IF = 55 A;  
TVJ = 25°C  
£
V
VT0  
rT  
For power-loss calculations only  
V
13 mW  
RthJC  
per diode; DC current  
per module  
per diode, DC current  
per module  
1.1 K/W  
0.18 K/W  
1.6 K/W  
0.27 K/W  
RthJH  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
11.2 mm  
9.7 mm  
50 m/s2  
Data according to IEC 60747 refer to a single diode unless otherwise stated  
for resistive load at bridge output.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 1  

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