5秒后页面跳转
VUO18-14DT8 PDF预览

VUO18-14DT8

更新时间: 2024-11-05 03:18:47
品牌 Logo 应用领域
IXYS 三相整流桥二极管
页数 文件大小 规格书
1页 24K
描述
Three Phase Rectifier Bridges with Semi Fast Diodes

VUO18-14DT8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:S-PUFM-D5
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.81其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 6 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.85 VJESD-30 代码:S-PUFM-D5
最大非重复峰值正向电流:300 A元件数量:6
相数:3端子数量:5
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:18 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1400 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED

VUO18-14DT8 数据手册

  
VUO 18  
Three Phase  
IdAVM = 18 A  
Rectifier Bridges  
with Semi Fast Diodes  
Preliminary Data  
VRRM = 1200-1600 V  
~
-
~ ~ ~  
+
-
VRSM  
V
VRRM  
V
Type  
~
1200  
1400  
1600  
1200  
1400  
1600  
VUO 18-12DT8  
VUO 18-14DT8  
VUO 18-16DT8  
~
+
Symbol  
Test Conditions  
Maximum Ratings  
Features  
l
Package with 1/4" fast-on terminals  
Isolation voltage 3000 V~  
Planar passivated chips  
Blocking voltage up to 1600 V  
Low forward voltage drop  
UL registered E 72873  
IdAV  
IdAVM  
T = 85°C, module  
TCC = 63°C, module  
14  
18  
A
A
l
l
l
l
l
IFSM  
T
= 45°C;  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
300  
330  
A
A
VVRJ = 0  
T
= T  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
270  
300  
A
A
VVRJ = 0 VJM  
I2t  
T
= 45°C  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
450  
460  
A2s  
A2s  
VVRJ = 0  
Applications  
l
T
= T  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
365  
380  
A2s  
A2s  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
Field supply for DC motors  
VVRJ = 0 VJM  
l
l
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
l
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Advantages  
l
Easy to mount with one screw  
Space and weight savings  
Improved temperature and power  
Md  
Mounting torque  
(M5)  
(10-32 UNF)  
2 ± 10 %  
18 ± 10 %  
Nm  
lb.in.  
l
l
Weight  
typ.  
22  
g
cycling  
l
Up to 10 dB lower EMI/RFI  
Symbol  
IR  
Test Conditions  
Characteristic Values  
compared to standard rectifier  
Dimensions in mm (1 mm = 0.0394")  
TVJ = 25°C; VR = VRRM  
TVJ = 125°C; VR = VRRM  
£
£
0.3  
5.0  
mA  
mA  
VF  
IF = 55 A; TVJ = 25°C  
£
1.85  
V
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
1.2  
16  
V
mW  
trr  
TVJ = 25°C; IF = 10 A;  
£
1.5  
ms  
-di/dt = 10 A/ms, VR = 1/2 VRRM  
RthJC  
RthJK  
per diode; 120° el  
per module  
9.3  
1.55  
K/W  
K/W  
per diode; 120° e  
per module  
10.2  
1.7  
K/W  
K/W  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
12.7 mm  
9.4 mm  
50 m/s2  
Data according to IEC 60747  
© 2000 IXYS All rights reserved  
1 - 1  

与VUO18-14DT8相关器件

型号 品牌 获取价格 描述 数据表
VUO18-16DT8 IXYS

获取价格

Three Phase Rectifier Bridges with Semi Fast Diodes
VUO190 IXYS

获取价格

Three Phase Rectifier Bridge
VUO190-08NO7 IXYS

获取价格

Three Phase Rectifier Bridge
VUO190-08NO7 LITTELFUSE

获取价格

三相桥系列提供多种封装和高达2200V的击穿电压。
VUO190-12NO7 IXYS

获取价格

Three Phase Rectifier Bridge
VUO190-12NO7 LITTELFUSE

获取价格

三相桥系列提供多种封装和高达2200V的击穿电压。
VUO190-14NO7 IXYS

获取价格

Three Phase Rectifier Bridge
VUO190-16NO7 IXYS

获取价格

Three Phase Rectifier Bridge
VUO190-16NO7 LITTELFUSE

获取价格

三相桥系列提供多种封装和高达2200V的击穿电压。
VUO190-18NO7 IXYS

获取价格

Three Phase Rectifier Bridge