Datasheet > VSMY7852X01_1104

VSMY7852X01_1104

更新时间： 2024-11-11 08:18:11

品牌	Logo	应用领域
威世 - VISHAY		二极管化工
页数	文件大小	规格书
7页	143K
描述
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Techno

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VSMY7852X01_1104 数据手册

VSMY7852X01

Vishay Semiconductors

High Power Infrared Emitting Diode,

850 nm, Surface Emitter Technology

FFEATURES

• Package type: surface mount

• Package form: Little Star^®

• Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5

• Peak wavelength: _p= 850 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  = 60°

• Low forward voltage

20783

• Designed for high drive currents: up to 250 mA DC and up

to 1.5 A pulses

• Low thermal resistance: R_thJP= 15 K/W

• Floor life: 4 weeks, MSL 2a, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• AEC-Q101 qualified

DESCRIPTION

VSMY7852X01 is an infrared, 850 nm emitting diode based

on surface emitter technology with high radiant power and

high speed, molded in low thermal resistance Little Star

package. A 20 mil chip provides outstanding low forward

voltage and allows DC operation of the device up to 250 mA.

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

AAPPLICATIONS

• Infrared illumination for CMOS cameras (CCTV)

• Driver assistance systems

• Machine vision IR data transmission

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

 (deg)

_p(nm)

t_r(ns)

VSMY7852X01

850

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Tape and reel

REMARKS

MOQ: 2000 pcs, 2000 pcs/reel

PACKAGE FORM

VSMY7852X01-GS08

Little Star

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

Forward current

I_F

250

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p 100 μs

I_FM

500

1.5

t_p= 100 μs

I_FSM

P_V

500

°C

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

Thermal resistance junction/pin

T_j

125

T_amb

T_stg

T_sd

- 40 to + 100

260

°C

Acc. figure 7, J-STD-20

°C

Acc. J-STD-051, soldered on PCB

R_thJP

K/W

Document Number: 81146

Rev. 1.0, 29-Apr-11

For technical questions, contact: emittertechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VSMY7852X01_1104相关器件

型号	品牌	获取价格	描述	数据表
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VSMY98525DS	VISHAY	获取价格	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY98545	VISHAY	获取价格	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
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VSMY98545DS	VISHAY	获取价格	Infrared LED,
VSMY9857535	VISHAY	获取价格	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
VSMY98575ADS	VISHAY	获取价格	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
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