Datasheet > VSMY98525DS

VSMY98525DS

更新时间： 2024-09-10 14:55:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	212K
描述
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

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VSMY98525DS 数据手册

VSMY98525DS

Vishay Semiconductors

www.vishay.com

High Power Infrared Emitting Diode, 850 nm,

Surface Emitter Technology

FEATURES

• Package type: surface-mount

• Double stack technology

• Package form: power QFN

• Dimensions (L x W x H in mm): 3.85 x 3.85 x 3.00

• Peak wavelength: λ_p= 850 nm

• Zener diode for ESD protection up to 2 kV

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = 25°

• Designed for high drive currents: up to 1 A (DC) and up

to 5 A pulses

DESCRIPTION

As part of the SurfLight^TMportfolio, the VSMY98525DS

is an infrared, 850 nm emitting diode based on surface

emitter technology with high radiant power and high speed,

molded in low thermal resistance SMD package with lens.

A 42 mil chip provides outstanding radiant intensity and

allows DC operation of the device up to 1 A. Superior ESD

characteristics are ensured by an integrated Zener diode.

• Low thermal resistance: R_thJP= 9 K/W

• Floor life: 168 h, MSL 3, according to J-STD-020

• Lead (Pb)-free reflow soldering

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Infrared illumination for CMOS cameras (CCTV)

• Illumination for cameras (3D gaming)

• Machine vision

PRODUCT SUMMARY

t_r(ns)

COMPONENT

I_e(mW/sr)

ϕ (deg)

λ_p(nm)

VSMY98525DS

1000

850

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Tape and reel

REMARKS

MOQ: 600 pcs, 600 pcs/reel

PACKAGE FORM

VSMY98525DS

High power with lens

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

Forward current

I_F

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 μs

I_FM

t_p= 100 μs

I_FSM

P_V

3.5

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

Thermal resistance junction-to-pin

T_j

115

°C

K/W

T_amb

T_stg

T_sd

-40 to +85

-55 to +100

260

According to Fig. 7, J-STD-20

JESD 51

R_thJP

Rev. 1.1, 27-Jan-2022

Document Number: 84908

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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