Datasheet > VSB1545_15

VSB1545_15

更新时间： 2024-09-26 01:25:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	87K
描述
Photovoltaic Solar Cell Protection Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VSB1545_15 数据手册

VSB1545

Vishay General Semiconductor

www.vishay.com

Photovoltaic Solar Cell Protection Schottky Rectifier

Ultra Low V_F= 0.33 V at I_F= 5.0 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

• Low forward voltage drop, low power losses

• High efficiency operation

• High forward surge capability

• ESD capability

P600

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• T_J200 °C max. in solar bypass mode application

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

I_F(AV)

15 A

45 V

V_RRM

I_FSM

200 A

0.44 V

150 °C

200 °C

V_Fat I_F= 15 A

_OPmax. (AC mode)

MECHANICAL DATA

Case: P600

Molding compound meets UL 94 V-0 flammability rating

T_Jmax. (DC forward current)

Base P/N-M3

halogen-free, RoHS-compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VSB1545

V1545

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum average forward rectified current (fig. 1)

(2)

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

200

Operating junction temperature range

Storage temperature range

T_OP

- 40 to + 150

- 40 to + 175

°C

T_STG

Junction temperature in DC forward current

without reverse bias, t  1 hp

(3)

T_J

 200

°C

Notes

(1)

(2)

(3)

With heatsink

Without heatsink, free air

Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test

Revision: 06-Jul-12

Document Number: 89390

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

与VSB1545_15相关器件

型号	品牌	获取价格	描述	数据表
VSB1545-M3	VISHAY	获取价格	High efficiency operation
VSB1545-M3/54	VISHAY	获取价格	DIODE 6 A, 45 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE
VSB1545-M3/73	VISHAY	获取价格	DIODE 6 A, 45 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE
VSB1545-M3-54	VISHAY	获取价格	Photovoltaic Solar Cell Protection Schottky Rectifier
VSB1545-M3-73	VISHAY	获取价格	Photovoltaic Solar Cell Protection Schottky Rectifier
VSB1545S-E3	VISHAY	获取价格	Photovoltaic Solar Cell Protection Schottky Rectifier
VSB1545S-E3/73	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VSB15L45	VISHAY	获取价格	Photovoltaic Solar Cell Protection Schottky Rectifier
VSB-18MB	FUJITSU	获取价格	1 POLE-16 A (HEAVY POWER CONTROL) VSB SERIES
VSB-18MC	FUJITSU	获取价格	1 POLE-16 A (HEAVY POWER CONTROL) VSB SERIES

与VSB1545_15相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

2
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

6
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

15

产品中心

服务支持

精选活动

关于我们

帮助中心

VSB1545_15

VSB1545_15 数据手册

与VSB1545_15相关器件

与VSB1545_15相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VSB1545_15

VSB1545_15 数据手册

与VSB1545_15相关器件

与VSB1545_15相关文章

您还可以找

您在本页遇到什么问题？