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VS-MBRB2080CT-1HM3 PDF预览

VS-MBRB2080CT-1HM3

更新时间: 2024-11-22 00:50:23
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 196K
描述
Low forward voltage drop

VS-MBRB2080CT-1HM3 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.58其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
参考标准:AEC-Q101最大重复峰值反向电压:80 V
最大反向电流:100 µA表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

VS-MBRB2080CT-1HM3 数据手册

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VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 10 A  
TO-263AB (D2PAK)  
FEATURES  
TO-262AA  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• Center tap D2PAK and TO-262 packages  
Base  
common  
cathode  
Base  
common  
cathode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
• AEC-Q101 qualified, meets JESD 201 class 1 whisker test  
VS-MBR20 ...CT-1HM3  
VS-MBRB20...CTHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
DESCRIPTION  
Package  
TO-263AB (D2PAK), TO-262AA  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
IF(AV)  
2 x 10 A  
VR  
80 V, 100 V  
VF at IF  
IRM  
0.70 V  
6 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
24 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
20  
UNITS  
IF(AV)  
IFRM  
VRRM  
IFSM  
VF  
Rectangular waveform (per device)  
TC = 133 °C (per leg)  
A
20  
80 to 100  
850  
V
A
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
0.70  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
VS-MBRB2080CTHM3 VS-MBRB2090CTHM3 VS-MBRB20100CTHM3  
VS-MBR2080CT-1HM3 VS-MBR2090CT-1HM3 VS-MBR20100CT-1HM3  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
80  
90  
100  
V
Maximum working peak reverse voltage  
VRWM  
Revision: 03-Mar-15  
Document Number: 95859  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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