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VS-6F100 PDF预览

VS-6F100

更新时间: 2024-10-28 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 136K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

VS-6F100 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DO-4, 1 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:18 weeks风险等级:5.72
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-203AAJESD-30 代码:O-MUPM-D1
JESD-609代码:e3最大非重复峰值正向电流:167 A
元件数量:1相数:1
端子数量:1最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:6 A
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:1000 V最大反向电流:12000 µA
表面贴装:NO端子面层:Tin (Sn) - with Nickel (Ni) barrier
端子形式:SOLDER LUG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-6F100 数据手册

 浏览型号VS-6F100的Datasheet PDF文件第1页浏览型号VS-6F100的Datasheet PDF文件第3页浏览型号VS-6F100的Datasheet PDF文件第4页浏览型号VS-6F100的Datasheet PDF文件第5页浏览型号VS-6F100的Datasheet PDF文件第6页 
VS-6F(R) Series  
Vishay Semiconductors  
www.vishay.com  
FORWARD CONDUCTION  
PARAMETER  
SYMBOL  
IF(AV)  
TEST CONDITIONS  
VALUES  
6
UNITS  
A
Maximum average forward current  
at case temperature  
180° conduction, half sine wave  
160  
9.5  
°C  
Maximum RMS forward current  
IF(RMS)  
A
(1)  
Maximum non-repetitive peak reverse power  
PR  
10 μs square pulse, TJ = TJ maximum  
4
K/W  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
159  
167  
134  
141  
127  
116  
90  
No voltage  
reapplied  
Maximum peak, one cycle forward,  
non-repetitive surge current  
IFSM  
A
100 % VRRM  
reapplied  
Sinusoidal half wave,  
initial TJ =  
TJ maximum  
No voltage  
reapplied  
Maximum I2t for fusing  
I2t  
A2s  
100 % VRRM  
reapplied  
82  
Maximum I2t for fusing  
I2t  
VF(TO)1  
VF(TO)2  
rf1  
t = 0.1 ms to 10 ms, no voltage reapplied  
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum  
(I > x IF(AV)), TJ = TJ maximum  
1270  
0.63  
0.86  
15.7  
5.6  
A2s  
Low level value of threshold voltage  
High level value of threshold voltage  
Low level value of forward slope resistance  
High level value of forward slope resistance  
Maximum forward voltage drop  
V
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum  
(I > x IF(AV)), TJ = TJ maximum  
m  
rf2  
VFM  
Ipk = 19 A, TJ = 25 °C, tp = 400 μs rectangular wave  
1.10  
V
Note  
(1)  
Available only for avalanche version, all other parameters the same as 6F  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction  
temperature range  
TJ  
-65 to 175  
°C  
Maximum storage  
temperature range  
TStg  
RthJC  
RthCS  
-65 to 200  
2.5  
Maximum thermal resistance,  
junction to case  
DC operation  
K/W  
Maximum thermal resistance,  
case to heatsink  
Mounting surface, smooth, flat and greased  
0.5  
Lubricated threads  
(Not lubricated threads)  
1.2  
(1.5)  
N · m  
(lbf · in)  
Mounting torque, 10 %  
7
g
Approximate weight  
Case style  
0.25  
oz.  
See dimensions - link at the end of datasheet  
DO-203AA (DO-4)  
RthJC CONDUCTION  
CONDUCTION ANGLE  
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION  
TEST CONDITIONS  
UNITS  
180°  
120°  
90°  
0.34  
0.44  
0.57  
0.85  
1.37  
0.29  
0.48  
0.63  
0.88  
1.39  
TJ = TJ maximum  
K/W  
60°  
30°  
Note  
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC  
Revision: 28-Jan-14  
Document Number: 93519  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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