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VS-2EGH02-M3 PDF预览

VS-2EGH02-M3

更新时间: 2024-11-30 14:54:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 139K
描述
Ultrafast Rectifier, 2 A FRED Pt?

VS-2EGH02-M3 数据手册

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VS-2EGH02-M3  
Vishay Semiconductors  
www.vishay.com  
Ultrafast Rectifier, 2 A FRED Pt®  
FEATURES  
• Ultrafast recovery time, reduced Qrr and soft  
recovery  
• 175 °C maximum operating junction  
temperature  
• Specific for output and snubber operation  
• Low forward voltage drop  
Cathode  
Anode  
• Low leakage current  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
SMB (DO-214AA)  
• Meets JESD 201 class 2 whisker test  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
DESCRIPTION / APPLICATIONS  
3D Models  
State of the art ultrafast recovery rectifiers designed with  
optimized performance of forward voltage drop, ultrafast  
recovery time, and fast recovery.  
PRIMARY CHARACTERISTICS  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
IF(AV)  
2 A  
VR  
200 V  
0.66 V  
24 ns  
175 °C  
VF at IF  
These devices are intended for use in snubber, output  
operation, inverters or as freewheeling diodes.  
t
rr typ.  
TJ max.  
Package  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element.  
SMB (DO-214AA)  
Single  
Circuit configuration  
MECHANICAL DATA  
Case: SMB (DO-214AA)  
Molding compound meets UL 94 V-0 flammability rating  
Halogen-free, RoHS-compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
Polarity: color band denotes the cathode end  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
200  
V
IF(AV)  
TL = 150 °C (1)  
TJ = 25 °C, 6 ms square pulse  
2
70  
A
IFSM  
TJ, TStg  
-55 to +175  
°C  
Note  
(1)  
Mounted on PCB with 6 mm x 3.5 mm lands  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage, blocking voltage  
V
BR, VR  
IR = 100 μA  
200  
-
0.84  
0.66  
-
-
0.9  
0.7  
2
IF = 2 A  
-
-
-
-
-
-
V
Forward voltage  
VF  
IF = 2 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
IR  
μA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
20  
Junction capacitance  
CT  
12  
-
-
pF  
Critical rate if rise of reverse voltage  
dV/dtτ  
10 000  
V/μs  
Revision: 17-Mar-2021  
Document Number: 96444  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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