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VS-2EJH02-M3 PDF预览

VS-2EJH02-M3

更新时间: 2024-11-04 14:53:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 152K
描述
Hyperfast Rectifier, 2 A FRED Pt?

VS-2EJH02-M3 数据手册

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VS-2EJH02-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 2 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, reduced Qrr, and soft  
recovery  
®
eSMP Series  
• 175 °C maximum operating junction temperature  
• Low forward voltage drop  
• Low leakage current  
• Specific for output and snubber operation  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Bottom View  
Top View  
SlimSMA (DO-221AC)  
• Meets JESD 201 class 2 whisker test  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
Anode  
DESCRIPTION / APPLICATIONS  
State of the art hyperfast recovery rectifiers specifically  
designed with optimized performance of forward voltage  
drop and hyperfast recovery time.  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
3D Models  
PRIMARY CHARACTERISTICS  
These devices are intended for use in snubber, boost,  
lighting, as high frequency rectifiers and freewheeling  
diodes.  
The extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce power  
dissipation in the switching element.  
IF(AV)  
2 A  
VR  
200 V  
0.72 V  
25 ns  
175 °C  
VF at IF  
trr  
TJ max.  
MECHANICAL DATA  
Case: SlimSMA (DO-221AC)  
Molding compound meets UL 94 V-0 flammability rating  
Package  
SlimSMA (DO-221AC)  
Single  
Circuit configuration  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
Polarity: color band denotes cathode end  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
200  
V
IF(AV)  
TC = 155 °C (1)  
TJ = 25 °C  
2
65  
A
IFSM  
TJ, TStg  
-65 to +175  
°C  
Note  
(1)  
Device on PCB with 8 mm x 16 mm soldering lands  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage, blocking voltage  
V
BR, VR  
IR = 100 μA  
200  
-
0.85  
0.72  
-
-
0.93  
0.77  
2
IF = 2 A  
-
-
-
-
-
V
Forward voltage  
VF  
IF = 2 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
1
8
CT  
10  
-
Revision: 04-Feb-2021  
Document Number: 94881  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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