VS-2EJH02HM3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 2 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr, and
soft recovery
®
eSMP Series
• 175 °C maximum operating junction
temperature
• Specific for output and snubber operation
• Low forward voltage drop
• Low leakage current
Bottom View
Top View
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SlimSMA (DO-221AC)
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
Anode
LINKS TO ADDITIONAL RESOURCES
DESCRIPTION / APPLICATIONS
3
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
D
3D Models
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRIMARY CHARACTERISTICS
IF(AV)
2 A
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
VR
200 V
0.72 V
25 ns
175 °C
VF at IF
trr
TJ max.
Package
SlimSMA (DO-221AC)
Single
Circuit configuration
MECHANICAL DATA
Case: SlimSMA (DO-221AC)
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated leads, solderable per
J-STD-002
Polarity: color band denotes cathode end
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
200
V
IF(AV)
TC = 155 °C (1)
TJ = 25 °C
2
65
A
IFSM
TJ, TStg
-65 to +175
°C
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage, blocking voltage
V
BR, VR
IR = 100 μA
200
-
0.85
0.72
-
-
0.93
0.77
2
IF = 2 A
-
-
-
-
-
V
Forward voltage
VF
IF = 2 A, TJ = 125 °C
VR = VR rated
Reverse leakage current
Junction capacitance
IR
μA
pF
TJ = 125 °C, VR = VR rated
VR = 200 V
1
8
CT
10
-
Revision: 04-Feb-2021
Document Number: 94880
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000