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VS-2EJH02HM3 PDF预览

VS-2EJH02HM3

更新时间: 2024-11-30 14:53:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 156K
描述
Hyperfast Rectifier, 2 A FRED Pt?

VS-2EJH02HM3 数据手册

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VS-2EJH02HM3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 2 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, reduced Qrr, and  
soft recovery  
®
eSMP Series  
• 175 °C maximum operating junction  
temperature  
• Specific for output and snubber operation  
• Low forward voltage drop  
• Low leakage current  
Bottom View  
Top View  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
SlimSMA (DO-221AC)  
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
Anode  
LINKS TO ADDITIONAL RESOURCES  
DESCRIPTION / APPLICATIONS  
3
D
3
State of the art hyperfast recovery rectifiers specifically  
designed with optimized performance of forward voltage  
drop and hyperfast recovery time.  
D
3D Models  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 A  
These devices are intended for use in snubber, boost,  
lighting, piezo-injection, as high frequency rectifiers and  
freewheeling diodes.  
The extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce power  
dissipation in the switching element.  
VR  
200 V  
0.72 V  
25 ns  
175 °C  
VF at IF  
trr  
TJ max.  
Package  
SlimSMA (DO-221AC)  
Single  
Circuit configuration  
MECHANICAL DATA  
Case: SlimSMA (DO-221AC)  
Molding compound meets UL 94 V-0 flammability rating  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
Polarity: color band denotes cathode end  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
200  
V
IF(AV)  
TC = 155 °C (1)  
TJ = 25 °C  
2
65  
A
IFSM  
TJ, TStg  
-65 to +175  
°C  
Note  
(1)  
Device on PCB with 8 mm x 16 mm soldering lands  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage, blocking voltage  
V
BR, VR  
IR = 100 μA  
200  
-
0.85  
0.72  
-
-
0.93  
0.77  
2
IF = 2 A  
-
-
-
-
-
V
Forward voltage  
VF  
IF = 2 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
1
8
CT  
10  
-
Revision: 04-Feb-2021  
Document Number: 94880  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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