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VS-20CTQ150-M3 PDF预览

VS-20CTQ150-M3

更新时间: 2024-11-24 14:53:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 164K
描述
High Performance Schottky Rectifier, 2 x 10 A

VS-20CTQ150-M3 数据手册

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VS-20CTQ150-M3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 2 x 10 A  
FEATURES  
Base  
common  
cathode  
2
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
1
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
Anode  
Anode  
2
Common  
cathode  
1
3
3
TO-220AB 3L  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified according to JEDEC®-JESD 47  
PRIMARY CHARACTERISTICS  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
2 x 10 A  
150 V  
VR  
DESCRIPTION  
VF at IF  
0.66 V  
The center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
IRM max.  
TJ max.  
EAS  
5 mA at 125 °C  
175 °C  
2.45 mJ  
Package  
TO-220AB 3L  
Circuit configuration  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
20  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
150  
tp = 5 μs sine  
1030  
A
10 Apk, TJ = 125 °C (per leg)  
0.66  
V
TJ  
Range  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-20CTQ150-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
150  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
per leg  
10  
Maximum average forward  
current, see fig. 5  
IF(AV)  
50 % duty cycle at TC = 154 °C, rectangular waveform  
A
per device  
20  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
1030  
180  
Maximum peak one cycle non-repetitive  
surge current per leg, see fig. 7  
IFSM  
EAS  
IAR  
A
10 ms sine or 6 ms rect. pulse  
VRRM applied  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
TJ = 25 °C, IAS = 0.7 A, L = 10 mH  
2.45  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.7  
Revision: 22-Dec-2021  
Document Number: 96246  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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Low forward voltage drop