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VS-20CTQ150-N3 PDF预览

VS-20CTQ150-N3

更新时间： 2024-11-24 01:11:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 161K
描述
Schottky Rectifier

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VS-20CTQ150-N3 数据手册

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VS-20CTQ150PbF, VS-20CTQ150-N3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 10 A  
FEATURES  
Base  
common  
cathode  
2
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength  
and moisture resistance  
Anode  
Anode  
2
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AB  
2 x 10 A  
150 V  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
DESCRIPTION  
VF at IF  
0.66 V  
The center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
I
RM max.  
TJ  
5 mA at 125 °C  
175 °C  
Diode variation  
EAS  
Common cathode  
2.45 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform  
A
V
150  
tp = 5 μs sine  
1030  
A
VF  
10 Apk, TJ = 125 °C (per leg)  
Range  
0.66  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-20CTQ150PbF VS-20CTQ150-N3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
150  
150  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
10  
IF(AV)  
50 % duty cycle at TC = 154 °C, rectangular waveform  
A
per device  
20  
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
1030  
180  
Following any rated load  
condition and with rated  
IFSM  
EAS  
IAR  
A
10 ms sine or 6 ms rect. pulse  
VRRM applied  
Non-repetitive avalanche energy per leg  
TJ = 25 °C, IAS = 0.7 A, L = 10 mH  
2.45  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Repetitive avalanche current per leg  
0.7  
Revision: 26-Aug-11  
Document Number: 94164  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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