Datasheet > VS-20CTQPBF

VS-20CTQPBF

更新时间： 2024-11-24 01:00:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	182K
描述
Low forward voltage drop

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-20CTQPBF 数据手册

VS-20CTQ...PbF Series, VS-20CTQ...-N3 Series

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 2 x 10 A

FEATURES

Base

common

cathode

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical strength

and moisture resistance

Anode

Common

cathode

TO-220AB

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

• Designed and qualified according to JEDEC-JESD47

Package

TO-220AB

2 x 10 A

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

I_F(AV)

V_R

35 V, 40 V, 45 V

0.57 V

DESCRIPTION

V_Fat I_F

The VS-20CTQ... center tap Schottky rectifier series

has been optimized for low reverse leakage at high

temperature. The proprietary barrier technology allows for

reliable operation up to 175 °C junction temperature. Typical

applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

_RMmax.

15 mA at 125 °C

175 °C

T_Jmax.

Diode variation

E_AS

Common cathode

13 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

Range

35 to 45

1060

t_p= 5 μs sine

10 A_pk, T_J= 125 °C (per leg)

Range

V_F

0.57

T_J

- 55 to 175

°C

VOLTAGE RATINGS

VS-

PARAMETER

SYMBOL

UNITS

20CTQ035PbF 20CTQ035-N3 20CTQ040PbF 20CTQ040-N3 20CTQ045PbF 20CTQ045-N3

Maximum DC

reverse voltage

V_R

Maximum working

peak reverse

voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES UNITS

Maximum average forward current

See fig. 5

I_F(AV)

50 % duty cycle at T_C= 145 °C, rectangular waveform

Maximum peak one cycle non-repetitive

surge current per leg

See fig. 7

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

1060

Following any rated load

condition and with rated

V_RRMapplied

I_FSM

265

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

T_J= 25 °C, I_AS= 2.0 A, L = 6.5 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

2.0

Revision: 25-Aug-11

Document Number: 94162

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与VS-20CTQPBF相关器件

型号	品牌	获取价格	描述	数据表
VS-20CTQS-M3	VISHAY	获取价格	Low forward voltage drop
VS-20CUT10FNTR	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-20CUT10FNTRL	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-20CUT10FNTRR	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-20CWT10FN	VISHAY	获取价格	Rectifier Diode, Schottky, 10A, 100V V(RRM),
VS-20CWT10FNTR	VISHAY	获取价格	Rectifier Diode, Schottky, 10A, 100V V(RRM),
VS-20CWT10FNTRL	VISHAY	获取价格	Rectifier Diode, Schottky, 10A, 100V V(RRM),
VS-20CWT10FNTRR	VISHAY	获取价格	Rectifier Diode, Schottky, 10A, 100V V(RRM),
VS-20ETF02FP-M3	VISHAY	获取价格	Fast Soft Recovery Rectifier Diode, 20 A
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3	VISHAY	获取价格	Fast Soft Recovery Rectifier Diode, 20 A

与VS-20CTQPBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-20CTQPBF

VS-20CTQPBF 数据手册

与VS-20CTQPBF相关器件

与VS-20CTQPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-20CTQPBF

VS-20CTQPBF 数据手册

与VS-20CTQPBF相关器件

与VS-20CTQPBF相关文章

您还可以找

您在本页遇到什么问题？