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VS-15MQ40NTRRPBF PDF预览

VS-15MQ40NTRRPBF

更新时间: 2024-11-01 18:31:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 110K
描述
RECTIFIER DIODE

VS-15MQ40NTRRPBF 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.74
二极管类型:RECTIFIER DIODEBase Number Matches:1

VS-15MQ40NTRRPBF 数据手册

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VS-15MQ040NPbF  
Vishay High Power Products  
Schottky Rectifier, 3 A  
FEATURES  
• Surface mountable  
• Extremely low forward voltage  
• Compact size  
• Improved reverse blocking voltage capability  
relative to other similar size Schottky  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Cathode  
Anode  
SMA  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
APPLICATIONS  
• Switching power supplies  
• Meter protection  
• Reverse protection for power input to PC board circuits  
• Battery isolation and charging  
• Low threshold voltage diode  
• Freewheeling or by-pass diode  
• Low voltage clamp  
PRODUCT SUMMARY  
IF(AV)  
3 A  
VR  
40 V  
DESCRIPTION  
The VS-15MQ040NPbF Schottky rectifier is designed to be  
used for low power applications where a reverse voltage of  
40 V is encountered and surface mountable is required.  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
UNITS  
DC  
3
40  
A
V
tp = 5 μs sine  
2 Apk, TJ = 125 °C  
Range  
330  
A
VF  
0.43  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-15MQ040NPbF  
40  
UNITS  
Maximum DC reverse voltage  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 105 °C, rectangular waveform  
On PC board 9 mm2 island  
(0.013 mm thick copper pad area)  
Maximum average forward current  
See fig. 4  
IF(AV)  
2.1  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
330  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 12 mH  
140  
6.0  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Document Number: 94141  
Revision: 04-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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