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VS-15ETH06TRRSPBF

更新时间： 2024-11-02 01:22:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 166K
描述
Hyperfast Rectifier, 15 A FRED Pt®

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VS-15ETH06SPbF, VS-15ETH06-1PbF  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 15 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Single die center tap module  
TO-263AB (D2PAK)  
TO-262AA  
Base  
cathode  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
2
2
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
1
3
1
DESCRIPTION / APPLICATIONS  
N/C  
Anode  
N/C  
Anode  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
VS-15ETH06SPbF  
VS-15ETH06-1PbF  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
The extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
15 A  
600 V  
VR  
VF at IF  
1.3 V  
t
rr (typ.)  
22 ns  
TJ max.  
175 °C  
Single diode  
Diode variation  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
V
TC = 140 °C  
TJ = 25 °C  
15  
IFSM  
120  
A
IFM  
30  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 15 A  
600  
-
-
V
-
-
-
-
-
-
1.8  
1.3  
0.2  
30  
2.2  
1.6  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
20  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 09-Jul-15  
Document Number: 94003  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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