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VS-11DQ04-M3 PDF预览

VS-11DQ04-M3

更新时间: 2024-11-21 19:46:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 112K
描述
DIODE 1.1 A, 40 V, SILICON, RECTIFIER DIODE, DO-204AL, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Rectifier Diode

VS-11DQ04-M3 技术参数

生命周期:Obsolete零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:225 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:1.1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:40 V表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIALBase Number Matches:1

VS-11DQ04-M3 数据手册

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VS-11DQ03, VS-11DQ03-M3, VS-11DQ04, VS-11DQ04-M3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 1.1 A  
FEATURES  
• Low profile, axial leaded outline  
• High frequency operation  
Cathode  
Anode  
• Very low forward voltage drop  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
DO-204AL  
• Guard ring for enhanced ruggedness and  
long term reliability  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for commercial level  
PRODUCT SUMMARY  
Package  
DO-204AL (DO-41)  
1.1 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-M3 only)  
IF(AV)  
VR  
30 V, 40 V  
VF at IF  
See Electrical table  
6.0 mA at 125 °C  
150 °C  
DESCRIPTION  
I
RM max.  
The VS-11DQ... axial leaded Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
TJ max.  
Diode variation  
EAS  
Single die  
3.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1.1  
UNITS  
Rectangular waveform  
A
V
30/40  
tp = 5 μs sine  
1 Apk, TJ = 25 °C  
Range  
225  
A
VF  
0.55  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-11DQ03  
VS-11DQ03-M3  
VS-11DQ04  
VS-11DQ04-M3 UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
30  
30  
40  
40  
V
VRWM  
ABSOLUTE MAXIMUM  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 4  
IF(AV)  
50 % duty cycle at TC = 75 °C, rectangular waveform  
1.1  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
5 µs sine or 3 µs rect. pulse  
225  
Following any rated  
load condition and with  
rated VRRM applied  
IFSM  
10 ms sine or 6 ms rect. pulse  
35  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.0 A, L = 6 mH  
3.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Revision: 21-Sep-11  
Document Number: 93205  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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