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VS-123NQ100PbF

更新时间： 2024-09-19 14:55:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 128K
描述
High Performance Schottky Rectifier, 120 A

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VS-123NQ100PbF 数据手册

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VS-123NQ100PbF  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 120 A  
FEATURES  
Lug terminal  
anode  
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• Guard ring for enhanced ruggedness and  
long term reliability  
Base  
cathode  
• Designed and qualified for industrial level  
• UL approved file E222165  
HALF-PAK (D-67)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
DESCRIPTION  
IF(AV)  
120 A  
100 V  
The VS-123NQ.. high current Schottky rectifier module  
series has been optimized for low reverse leakage at high  
temperature. The proprietary barrier technology allows  
for reliable operation up to 175 °C junction temperature.  
Typical applications are in high current switching power  
supplies, plating power supplies, UPS systems, converters,  
freewheeling diodes, welding, and reverse battery  
protection.  
VR  
Package  
HALF-PAK (D-67)  
Single diode  
Circuit configuration  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
120  
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
120 Apk, TJ = 125 °C  
Range  
12 800  
0.73  
A
VF  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-123NQ100PbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 133 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
120  
A
5 μs sine or 3 μs rect. pulse  
12 800  
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 5.5 A, L = 1 mH  
1800  
15  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1
Revision: 01-Feb-2019  
Document Number: 94129  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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