Datasheet > VS-120NQ045PBF

VS-120NQ045PBF

更新时间： 2024-09-19 01:15:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	140K
描述
High Performance Schottky Rectifier

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中文翻译

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VS-120NQ045PBF 数据手册

VS-120NQ045PbF

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 120 A

FEATURES

Lug terminal

anode

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long

term reliability

Base

cathode

• Designed and qualified for industrial level

• UL approved file E222165

HALF-PAK (D-67)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

DESCRIPTION

I_F(AV)

120 A

45 V

The VS-120NQ.. high current Schottky rectifier module

series has been optimized for low reverse leakage at high

temperature. The proprietary barrier technology allows for

reliable operation up to 150 °C junction temperature. Typical

applications are in high current switching power supplies,

plating power supplies, UPS systems, converters,

freewheeling diodes, welding, and reverse battery

protection.

V_R

Package

Circuit

HALF-PAK (D-67)

Single diode

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

120

UNITS

Rectangular waveform

t_p= 5 μs sine

120 A_pk, T_J= 125 °C

Range

26 000

0.62

V_F

T_J

-55 to +150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-120NQ045PbF

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_R

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 105 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

120

Maximum peak one cycle

non-repetitive surge current

See fig. 7

5 µs sine or 3 µs rect. pulse

26 000

Following any rated load

condition and with rated

I_FSM

V_RRMapplied

10 ms sine or 6 ms rect. pulse

1550

Non-repetitive avalanche energy

E_AS

I_AR

T_J= 25 °C, I_AS= 13 A, L = 1 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Repetitive avalanche current

Revision: 11-May-17

Document Number: 94458

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

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与VS-120NQ045PBF相关器件

型号	品牌	获取价格	描述	数据表
VS-120NQ045PBF_17	VISHAY	获取价格	High Performance Schottky Rectifier
VS-121NQ045PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, ROHS COMPLIANT, D-67,
VS-122NQ030PBF	VISHAY	获取价格	High Performance Schottky Rectifier
VS-122NQ030PBF_17	VISHAY	获取价格	High Performance Schottky Rectifier
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VS12526000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
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