Datasheet > VP2450N3-G

VP2450N3-G

更新时间： 2024-02-22 10:05:39

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美国微芯 - MICROCHIP		/
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VP2450N3-G 数据手册

VP2450

P-Channel Enhancement-Mode Vertical DMOS FET

Features

General Description

• Free from Secondary Breakdown

• Low Power Drive Requirement

• Ease of Paralleling

The VP2450 is a low-threshold, Enhancement-mode

(normally-off) transistor that utilizes

vertical

Double-diffused Metal-Oxide Semiconductor (DMOS)

structure and a well-proven silicon gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors and

the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of

all MOS structures, this device is free from thermal

runaway and thermally induced secondary breakdown.

• Low C_ISSand Fast Switching Speeds

• High Input Impedance and High Gain

• Excellent Thermal Stability

• Integral Source-drain Diode

Applications

This Vertical DMOS Field-Effect Transistor (FET) is

ideally suited to a wide range of switching and

amplifying applications where very low threshold

voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching

speeds are desired.

• Motor Controls

• Converters

• Amplifiers

• Switches

• Power Supply Circuits

• Drivers: Relays, Hammers, Solenoids, Lamps,

Memory, Displays, Bipolar Transistors, etc.

Package Types

TO-92

SOT-89

DRAIN

SOURCE

DRAIN

GATE

DRAIN

SOURCE

GATE

See Table 3-1 for pin information.

 2016 Microchip Technology Inc.

DS20005569A-page 1

12 3 4 5 6 7...14

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VP2450N3-G 替代型号

型号	品牌	替代类型	描述	数据表
TP2540N3-G	MICROCHIP	类似代替	86mA, 400V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

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