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VP2450N8

更新时间： 2024-01-16 14:12:17
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 95K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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VP2450N8 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-F3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：8 weeks
风险等级：1.01外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (ID)：0.16 A最大漏源导通电阻：30 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-243AA
JESD-30 代码：R-PSSO-F3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：0.8 A
认证状态：Not Qualified表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：FLAT
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VP2450N8 数据手册

 浏览型号VP2450N8的Datasheet PDF文件第2页浏览型号VP2450N8的Datasheet PDF文件第3页浏览型号VP2450N8的Datasheet PDF文件第4页 
VP2450  
P-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
ID(ON)  
BVDSS  
/
RDS(ON)  
BVDGS  
(max)  
(min)  
TO-92  
TO-243AA*  
Die  
-500V  
30Ω  
-0.2A  
VP2450N3  
VP2450N8  
VP2450ND  
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.  
Product marking for TO-243AA:  
Features  
❏ Free from secondary breakdown  
❏ Low power drive requirement  
❏ Ease of paralleling  
VP4E❏  
Where ❏ = 2-week alpha date code  
❏ Low CISS and fast switching speeds  
❏ Excellent thermal stability  
Advanced DMOS Technology  
❏ Integral Source-Drain diode  
These enhancement-mode (normally-off) transistors utilize a  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces devices with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
❏ High input impedance and high gain  
❏ Complementary N- and P-channel devices  
Applications  
❏ Motor controls  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
❏ Converters  
❏ Amplifiers  
❏ Switches  
❏ Power supply circuits  
❏ Drivers (relays, hammers, solenoids, lamps, memories,  
Package Options  
displays, bipolar transistors, etc.)  
D
Absolute Maximum Ratings  
Drain-to-Source Voltage  
G
D
S
BVDSS  
Drain-to-Gate Voltage  
BVDGS  
± 20V  
TO-243AA  
(SOT-89)  
S G D  
Gate-to-Source Voltage  
TO-92  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
07/08/02  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
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