Datasheet > VP2450N3-GP013

VP2450N3-GP013

更新时间： 2024-02-29 12:00:26

品牌	Logo	应用领域
超科 - SUPERTEX		输入元件开关晶体管
页数	文件大小	规格书
6页	695K
描述
Small Signal Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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VP2450N3-GP013 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	CYLINDRICAL, O-PBCY-T3	Reach Compliance Code：	unknown
风险等级：	5.62	其他特性：	HIGH INPUT IMPEDANCE
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	500 V
最大漏极电流 (ID)：	0.1 A	最大漏源导通电阻：	30 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	20 pF
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	P-CHANNEL	功耗环境最大值：	0.74 W
最大功率耗散 (Abs)：	0.74 W	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

VP2450N3-GP013 数据手册

Supertex inc.

VP2450

P-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► Low C_ISSand fast switching speeds

► High input impedance and high gain

► Excellent thermal stability

► Integral source-to-drain diode

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Product Summary

R_DS(ON)

I_D(ON)

Part Number

Package Option

Packing

V_GS(th)

(max)

BV_DSS/BV_DGS

(max)

(min)

VP2450N3-G

3-Lead TO-92

1000/Bag

-500V

30Ω

-200mA

-0.4V

VP2450N3-G P002

VP2450N3-G P003

Pin Conﬁguration

VP2450N3-G P005 3-Lead TO-92

VP2450N3-G P013

2000/Reel

DRAIN

VP2450N3-G P014

VP2450N3-G

TO-243AA (SOT-89)

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

SOURCE

DRAIN

GATE

Absolute Maximum Ratings

Parameter

TO-92

TO-243AA (SOT-89)

Value

BV_DSS

BV_DGS

±20V

Drain-to-source voltage

Drain-to-gate voltage

Product Marking

SiVP

2 4 5 0

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Gate-to-source voltage

Operating and storage temperature

-55^OC to +150^OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Package may or may not include the following marks: Si or

TO-92

Typical Thermal Resistance

W = Code for week sealed

VP4EW

Package

θ_ja

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-243AA (SOT-89)

TO-92

132^OC/W

133^OC/W

TO-243AA (SOT-89)

Doc.# DSFP-VP2450

B082613

Supertex inc.

www.supertex.com

12 3 4 5 6

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与VP2450N3-GP013相关器件

型号	品牌	获取价格	描述	数据表
VP2450N3-GP014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
VP2450N8	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP2450ND	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP2530N3	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Silicon, Metal-ox
VP2530N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Silicon, Metal-ox
VP2530N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Silicon, Metal-ox
VP2530N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Silicon, Metal-ox
VP2530N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Silicon, Metal-ox
VP2530N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Silicon, Metal-ox
VP2530N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Silicon, Metal-ox

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