VP2106
Thermal Characteristics
ID
ID
Power Dissipation
†
Package
IDR
IDRM
@TC = 25OC
(continuous)†
(pulsed)
TO-92
-250mA
-800mA
1.0W
-250mA
-800mA
Notes:
†
ID (continuous) is limited by max rated Tj .
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym
BVDSS
VGS(th)
Parameter
Min
Typ
Max Units Conditions
Drain-to-source breakdown voltage
Gate threshold voltage
-60
-
-
-
V
V
VGS = 0V, ID = -1.0mA
VGS = VDS, ID= -1.0mA
-1.5
-3.5
ΔVGS(th) Change in VGS(th) with temperature
-
-
-
5.8
-1.0
-
6.5 mV/OC VGS = VDS, ID= -1.0mA
IGSS
Gate body leakage
-100
-10
nA
µA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
IDSS
Zero gate voltage drain current
On-state drain current
V
DS = 0.8 Max Rating,
-
-
-1.0
mA
A
VGS = 0V, TA = 125°C
ID(ON)
-0.5 -1.0
-
VGS = -10V, VDS = -25V
VGS = -5.0V, ID = -100mA
VGS = -10V, ID = -500mA
-
11
9.0
0.55
200
45
15
12
1.0
-
RDS(ON) Static drain-to-source on-state resistance
Ω
-
ΔRDS(ON) Change in RDS(ON) with temperature
-
%/OC VGS = -10V, ID = -500mA
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transductance
Input capacitance
150
mmho VDS = -25V, ID = -500mA
-
-
-
-
-
-
-
-
-
60
30
8.0
5.0
8.0
9.0
8.0
-2.0
-
VGS = 0V,
VDS = -25V,
f = 1.0MHz
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
22
pF
ns
3.0
4.0
5.0
5.0
4.0
-1.2
400
VDD = -25V,
ID = -500mA,
Rise time
td(OFF)
tf
Turn-off delay time
RGEN = 25Ω
Fall time
VSD
Diode forward voltage drop
Reverse recovery time
V
VGS = 0V, ISD = -500mA
VGS = 0V, ISD = -500mA
trr
ns
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
Pulse
10%
Generator
INPUT
RGEN
90%
t(OFF)
-10V
t(ON)
td(ON)
D.U.T.
tr
td(OFF)
tf
INPUT
OUTPUT
0V
RL
90%
90%
OUTPUT
VDD
10%
10%
VDD
Doc.# DSFP-VP2106
C082313
Supertex inc.
www.supertex.com
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