是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.63 |
其他特性: | HIGH INPUT IMPEDANCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 0.25 A |
最大漏源导通电阻: | 12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 8 pF | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1 W | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VP2106N3-GP014 | MICROCHIP |
获取价格 |
SMALL SIGNAL, FET | |
VP2106N3P001 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
VP2106N3P006 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
VP2106N3P008 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
VP2106N3P011 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
VP2106N3P012 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
VP2106N3P014 | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
VP2106N3P016 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
VP2106N3P017 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
VP2109 | BOTHHAND |
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10/100 BASE-TX VOICE OVER IP MAGNETICS |