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VP2110K1-G PDF预览

VP2110K1-G

更新时间： 2024-09-24 21:11:15
品牌 Logo 应用领域
超科 - SUPERTEX 开关光电二极管晶体管
页数 文件大小 规格书
5页 638K
描述
Small Signal Field-Effect Transistor, 0.12A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3

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VP2110K1-G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：SOT-23
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.3
其他特性：LOW THRESHOLD配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：0.12 A
最大漏源导通电阻：12 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：8 pFJEDEC-95代码：TO-236AB
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：0.36 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VP2110K1-G 数据手册

 浏览型号VP2110K1-G的Datasheet PDF文件第2页浏览型号VP2110K1-G的Datasheet PDF文件第3页浏览型号VP2110K1-G的Datasheet PDF文件第4页浏览型号VP2110K1-G的Datasheet PDF文件第5页 
Supertex inc.  
VP2110  
P-Channel Enhancement-Mode  
Vertical DMOS FET  
General Description  
Features  
The Supertex VP2110 is an enhancement-mode (normally-  
off) transistor that utilizes a vertical DMOS structure and  
Supertex’s well-proven silicon-gate manufacturing process.  
This combination produces a device with the power handling  
capabilities of bipolar transistors, and the high input  
impedance and positive temperature coefficient inherent  
in MOS devices. Characteristic of all MOS structures, this  
device is free from thermal runaway and thermally-induced  
secondary breakdown.  
► Free from secondary breakdown  
► Low power drive requirement  
► Ease of paralleling  
► Low CISS and fast switching speeds  
► Excellent thermal stability  
► Integral source-to-drain diode  
► High input impedance and high gain  
Applications  
► Motor controls  
► Converters  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
► Amplifiers  
► Switches  
► Power supply circuits  
► Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Ordering Information  
Product Summary  
RDS(ON)  
Part Number  
Package Option  
Packing  
ID(ON  
(min)  
BVDSS/BVDGS  
(max)  
VP2110K1-G  
TO-236AB (SOT-23)  
3000/Reel  
-100V  
12Ω  
-500mA  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
Pin Configuration  
Absolute Maximum Ratings  
Parameter  
DRAIN  
Value  
Drain-to-source voltage  
Drain-to-gate voltage  
BVDSS  
BVDGS  
±20V  
SOURCE  
Gate-to-source voltage  
GATE  
Operating and storage temperature  
-55OC to +150OC  
TO-236AB (SOT-23)  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
Product Marking  
W = Code for Week Sealed  
= “Green” Packaging  
Typical Thermal Resistance  
P1AW  
Package  
θja  
Package may or may not include the following marks: Si or  
TO-236AB (SOT-23)  
203OC/W  
TO-236AB (SOT-23)  
Doc.# DSFP-VP2110  
B082313  
Supertex inc.  
www.supertex.com  
12345

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VP2110K1-G 替代型号

型号 品牌 替代类型 描述 数据表
MMBF170 ONSEMI

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