Datasheet > VP2110

VP2110

更新时间： 2024-09-18 14:55:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
5页	642K
描述
VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure an

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VP2110 数据手册

Supertex inc.

VP2110

P-Channel Enhancement-Mode

Vertical DMOS FET

General Description

Features

The Supertex VP2110 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors, and the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-to-drain diode

► High input impedance and high gain

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Product Summary

R_DS(ON)

Part Number

Package Option

Packing

I_D(ON

(min)

BV_DSS/BV_DGS

(max)

VP2110K1-G

TO-236AB (SOT-23)

3000/Reel

-100V

12Ω

-500mA

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Pin Conﬁguration

Absolute Maximum Ratings

Parameter

DRAIN

Value

Drain-to-source voltage

Drain-to-gate voltage

BV_DSS

BV_DGS

±20V

SOURCE

Gate-to-source voltage

GATE

Operating and storage temperature

-55^OC to +150^OC

TO-236AB (SOT-23)

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Product Marking

W = Code for Week Sealed

= “Green” Packaging

Typical Thermal Resistance

P1AW

Package

θ_ja

Package may or may not include the following marks: Si or

TO-236AB (SOT-23)

203^OC/W

TO-236AB (SOT-23)

Doc.# DSFP-VP2110

B082313

Supertex inc.

www.supertex.com

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与VP2110相关器件

型号	品牌	获取价格	描述	数据表
VP2110K1	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
VP2110K1-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 100V, 1-Element, P-Channel, Silicon, Met
VP2110N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Met
VP2110N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Met
VP2110N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Met
VP2110N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Met
VP2110N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Met
VP2110N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Met
VP2110N3P016	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Met
VP2110N3P017	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, P-Channel, Silicon, Met

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