Datasheet > VP2110K1

VP2110K1

更新时间： 2024-02-29 06:25:37

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	457K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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VP2110K1 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
Factory Lead Time：	16 weeks	风险等级：	1.81
Samacsys Description：	MOSFET 100V 12Ohm	其他特性：	LOW THRESHOLD
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	100 V
最大漏极电流 (ID)：	0.12 A	最大漏源导通电阻：	12 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	8 pF
JEDEC-95代码：	TO-236AB	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.36 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn) - annealed
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

VP2110K1 数据手册

VP2106

VP2110

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

Product marking for SOT-23:

P1A❋

BV_DGS

(max)

(min)

TO-92

VP2106N3

—

TO-236AB*

—

Die^†

—

-60V

12Ω

-0.5A

where ❋ = 2-week alpha date code

-100V

VP2110K1

VP2110ND

^†MIL visual screening available.

*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Features

Advanced DMOS Technology

❏

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

High input impedance and high gain

Complementary N- and P-channel devices

Applications

❏

Motor controls

Package Options

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

S G D

TO-236AB

(SOT-23)

top view

TO-92

BV_DSS

BV_DGS

± 20V

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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