5秒后页面跳转
VP0109N5 PDF预览

VP0109N5

更新时间: 2024-02-15 12:42:34
品牌 Logo 应用领域
超科 - SUPERTEX 局域网输入元件开关脉冲晶体管
页数 文件大小 规格书
4页 37K
描述
Power Field-Effect Transistor, 1A I(D), 90V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

VP0109N5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.68
其他特性:HIGH INPUT IMPEDANCE外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:90 V
最大漏极电流 (Abs) (ID):1 A最大漏极电流 (ID):1 A
最大漏源导通电阻:8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):8 pFJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL功耗环境最大值:15 W
最大功率耗散 (Abs):15 W最大脉冲漏极电流 (IDM):1.2 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):17 ns
最大开启时间(吨):16 nsBase Number Matches:1

VP0109N5 数据手册

 浏览型号VP0109N5的Datasheet PDF文件第1页浏览型号VP0109N5的Datasheet PDF文件第2页浏览型号VP0109N5的Datasheet PDF文件第3页 
VP0104/VP0106/VP0109  
Typical Performance Curves  
BVDSS Variation with Temperature  
On-Resistance vs. Drain Current  
50  
40  
30  
20  
10  
0
1.10  
V
= -5V  
GS  
1.06  
1.02  
0.98  
0.94  
0.90  
V
= -10V  
GS  
-50  
0
50  
100  
150  
0
-50  
0
-0.3  
-0.6  
-0.9  
-1.2  
-1.5  
ID (amperes)  
Tj (°C)  
Transfer Characteristics  
V(th) and RDS Variation with Temperature  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0
T
= -55°C  
A
1.6  
1.4  
1.2  
1.0  
0.8  
R
@ -10V, -0.5A  
@ -5V, 0.1A  
V
= -25V  
DS(ON)  
DS  
T
= 25°C  
A
R
DS(ON)  
V
@ -1.0mA  
(th)  
T
= 125°C  
A
0
-2  
-4  
-6  
-8  
-10  
0
50  
100  
150  
V
GS (volts)  
Tj (°C)  
Capacitance vs. Drain-to-Source Voltage  
f = 1MHz  
Gate Drive Dynamic Characteristics  
100  
75  
50  
25  
0
-10  
-8  
-6  
-4  
-2  
0
VDS = -10V  
70 pF  
VDS  
= -40V  
70 pF  
CISS  
COSS  
45pF  
CRSS  
0
-10  
-20  
-30  
-40  
0.2  
0.4  
0.6  
0.8  
1.0  
QG (nanocoulombs)  
VDS (volts)  
7-222  

与VP0109N5相关器件

型号 品牌 获取价格 描述 数据表
VP0109N9 NJSEMI

获取价格

P-Channel Enhancement-Mode
VP0109ND SUPERTEX

获取价格

P-Channel Enhancement-Mode Vertical DMOS FETs
VP0109ND NJSEMI

获取价格

P-Channel Enhancement-Mode
VP0109ND(VF01) SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.25A I(D), 90V, 1-Element, P-Channel, Silicon, Meta
VP0109ND(VF15) SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.25A I(D), 90V, 1-Element, P-Channel, Silicon, Meta
VP010PN5 NJSEMI

获取价格

P-Channel Enhancement-Mode
VP0116N2 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.2A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3P001 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3P002 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta