Datasheet > VN0650N3

VN0650N3

更新时间： 2024-02-15 04:14:52

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	34K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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数据手册

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VN0650N3 数据手册

VN0645

VN0650

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

(min)

BV_DGS

TO-39

TO-92

—

Die^†

450V

16Ω

0.5A

VN0645N2

—

500V

VN0650N3

VN0650ND

†

MIL visual screening available

High Reliability Devices

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

Advanced DMOS Technology

The VN0650 is NOT recommended for new designs. Please

use VN2450 instead.

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Features

■ Free from secondary breakdown

■ Low power drive requirement

■ Ease of paralleling

■ Low C_ISSand fast switching speeds

■ Excellent thermal stability

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

■ Integral Source-Drain diode

■ High input impedance and high gain

■ Complementary N- and P-channel devices

Applications

■ Motor controls

Package Options

■ Converters

■ Amplifiers

■ Switches

■ Power supply circuits

■ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

S G D

TO-39

Case: DRAIN

BV_DSS

BV_DGS

TO-92

Drain-to-Gate Voltage

Gate-to-Source Voltage

± 20V

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

7-175

12 3 4

中文翻译

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与VN0650N3相关器件

型号	品牌	获取价格	描述	数据表
VN0650N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta
VN0650N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta
VN0650N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta
VN0650N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta
VN0650N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta
VN0650N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta
VN0650N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta
VN0650N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta
VN0650N3P015	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta
VN0650N3P016	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta

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