Datasheet > VN0635

VN0635

更新时间： 2024-11-07 03:19:43

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	32K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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数据手册

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VN0635 数据手册

VN0635

VN0640

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

I_D(ON)

BV_DSS

R_DS(ON)

(max)

BV_DGS

(min)

0.75A

TO-92

Die^†

350V

10Ω

VN0635N3

VN0640N3

VN0635ND

VN0640ND

400V

†

MIL visual screening available

Features

■ Free from secondary breakdown

■ Low power drive requirement

■ Ease of paralleling

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

■ Low C_ISSand fast switching speeds

■ Excellent thermal stability

■ Integral Source-Drain diode

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

■ High input impedance and high gain

■ Complementary N- and P-channel devices

Applications

■ Motor controls

Package Options

■ Converters

■ Amplifiers

■ Switches

■ Power supply circuits

■ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

S G D

TO-92

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

7-171

12 3 4

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与VN0635相关器件

型号	品牌	获取价格	描述	数据表
VN0635N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Meta
VN0635N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN0635N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN0635N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN0635N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN0635N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN0635N3P014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN0635N5	SUPERTEX	获取价格	Power Field-Effect Transistor, 1.6A I(D), 350V, 10ohm, 1-Element, N-Channel, Silicon, Meta
VN0640	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN0640N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.6A I(D), 400V, 1-Element, N-Channel, Silicon, Meta