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VN0300L-GP005 PDF预览

VN0300L-GP005

更新时间: 2024-11-11 15:57:35
品牌 Logo 应用领域
美国微芯 - MICROCHIP 开关晶体管
页数 文件大小 规格书
3页 545K
描述
SMALL SIGNAL, FET

VN0300L-GP005 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.58
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):0.64 A最大漏源导通电阻:1.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):50 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

VN0300L-GP005 数据手册

 浏览型号VN0300L-GP005的Datasheet PDF文件第2页浏览型号VN0300L-GP005的Datasheet PDF文件第3页 
Supertex inc.  
VN0300  
N-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
General Description  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
This enhancement-mode (normally-off) transistor utilizes  
a vertical DMOS structure and Supertex’s well-proven,  
silicon-gate manufacturing process. This combination  
produces a device with the power handling capabilities  
of bipolar transistors and the high input impedance and  
positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally-induced secondary  
breakdown.  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral source-drain diode  
High input impedance and high gain  
Applications  
Motor controls  
Converters  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
Amplifiers  
Switches  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps, memories,  
displays, bipolar transistors, etc.)  
Ordering Information  
Product Summary  
RDS(ON)  
(max)  
Part Number  
Package Option  
Packing  
IDSS  
(min)  
BVDSS/BVDGS  
VN0300L-G  
TO-92  
1000/Bag  
30V  
1.2Ω  
1.0A  
VN0300L-G P002  
VN0300L-G P003  
VN0300L-G P005  
VN0300L-G P013  
VN0300L-G P014  
Pin Configuration  
TO-92  
2000/Reel  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
DRAIN  
SOURCE  
Absolute Maximum Ratings  
Parameter  
Value  
GATE  
TO-92  
Drain-to-source voltage  
Drain-to-gate voltage  
BVDSS  
BVDGS  
±30V  
Gate-to-source voltage  
Product Marking  
Operating and storage temperature  
-55OC to +150OC  
Si VN  
0 3 0 0 L  
YYWW  
YY = Year Sealed  
Absolute Maximum Ratings are those values beyond which damage to the device may  
occur. Functional operation under these conditions is not implied. Continuous operation  
of the device at the absolute rating level may affect device reliability. All voltages are  
referenced to device ground.  
WW = Week Sealed  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
Typical Thermal Resistance  
TO-92  
Package  
θja  
TO-92  
132OC/W  
Doc.# DSFP-VN0300  
B081913  
Supertex inc.  
www.supertex.com  

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